公开(公告)号：US20210109437A1

公开(公告)日：2021-04-15

申请号：US16855083

申请日：2020-04-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heungsuk OH ,  Joobyoung KIM ,  Sanghun KIM ,  Guk Hyun KIM

IPC: G03F1/36 ,  G06F30/392

Abstract: A computer-readable medium includes a program code that, when executed by a processing circuitry, causes the processing circuitry to divide a layout of a semiconductor chip into a plurality of patches, generate a plurality of segments from a layout of each of the plurality of patches, wherein a first patch of the plurality of patches includes first segments and a second patch of the plurality of patches includes second segments, calculate hash values respectively corresponding to the first segments and the second segments by using a hash function, calculate bias values of segments having a first hash value from among the first segments, calculate a representative value based on the bias values, and apply the representative value to the segments having the first hash value from among the first segments.

公开(公告)号：US20230176469A1

公开(公告)日：2023-06-08

申请号：US17812005

申请日：2022-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Heungsuk OH ,  Kyu-Bin HAN ,  Sangwook KIM

IPC: G03F1/36 ,  H01L21/768 ,  H01L21/027

CPC classification number: G03F1/36 ,  H01L21/768 ,  H01L21/027

Abstract: Provided is a method of fabricating a semiconductor device using a curvilinear OPC method. The method of fabricating the semiconductor device includes performing an optical proximity correction (OPC) step on a layout to generate a correction pattern, the correction pattern having a curvilinear shape, performing a mask rule check (MRC) step on the correction pattern to generate mask data, and forming a photoresist pattern on a substrate using a photomask, which is manufactured based on the mask data. The MRC step includes generating a width skeleton in the correction pattern, generating a width contour, which satisfies a specification of a mask rule for a linewidth, from the width skeleton, and adding the correction pattern and the width contour to generate an adjusting pattern.

公开(公告)号：US20250028235A1

公开(公告)日：2025-01-23

申请号：US18643392

申请日：2024-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Heungsuk OH ,  Hun KANG ,  Sangwook KIM ,  Sanghun KIM ,  Sujin OH ,  Jinseok OH

IPC: G03F1/36 ,  G03F1/70 ,  G06F30/392 ,  G06F119/18

Abstract: Provided are an optical proximity correction (OPC) method capable of maintaining full-chip bias consistency and a mask manufacturing method including the OPC method. The OPC method includes obtaining a first optical proximity corrected (OPCed) design layout by implementing a first OPC on an OPC target design layout; performing a reverse dissection on the OPC target design layout based on the first OPCed design layout to generate first segments; performing a reverse correction to allocate first biases of the first OPCed design layout to the first segments of the OPC target design layout; determining a full-chip representative bias based on a segment grouping of the first segments; applying the full-chip representative bias to an entire chip area; preparing mask data based on the full-chip representative bias that has been applied to the entire chip area; and exposing a mask substrate based on the mask data.