公开(公告)号：US20230125680A1

公开(公告)日：2023-04-27

申请号：US17510652

申请日：2021-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： USEONG KIM ,  Bayram YENIKAYA ,  Mindy LEE ,  Xin ZHOU ,  HEE-JUN LEE ,  WOO-YONG CHO

IPC: G06F30/398 ,  G06K9/82 ,  G06K9/46

Abstract: Disclosed is an operating method of an electronic device for manufacture of a semiconductor device. The operating method includes receiving a layout image of the semiconductor device, generating an intermediate image by generating assist features based on main features of the layout image, evaluating a process result by performing simulation based on the intermediate image, and correcting the intermediate image by correcting shapes of the main features and/or the assist features of the intermediate image based on the process result.

公开(公告)号：US20240419084A1

公开(公告)日：2024-12-19

申请号：US18442205

申请日：2024-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： HEUNGSUK OH ,  SANGWOOK KIM ,  HEE-JUN LEE ,  JEEEUN JUNG ,  WOO-YONG CHO

IPC: G03F7/00 ,  G03F1/36

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes performing an optical proximity correction (OPC) on a design pattern of a layout and forming a photoresist pattern on a substrate using a photomask manufacture based the corrected layout. The performing of the OPC includes analyzing a cell hierarchy to choose a representative cell in the layout, dividing the design pattern in the representative cell into a plurality of segments including first segments, choosing a first unique segment, which represents the first segments, from the plurality of segments, generating a first correction bias of the first unique segment, applying the first correction bias to all of the first segments to generate a correction pattern, and applying a correction result of the representative cell to other cells that are included in the layout and are of a same type as the representative cell.

公开(公告)号：US20240176227A1

公开(公告)日：2024-05-30

申请号：US18330729

申请日：2023-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HEUNGSUK OH ,  Joobyoung KIM ,  SANGWOOK KIM ,  HEE-JUN LEE ,  JEEEUN JUNG ,  KYU-BIN HAN

IPC: G03F1/36 ,  H01L21/32

CPC classification number: G03F1/36 ,  H01L21/32

Abstract: A photomask fabrication method comprising performing an optical proximity correction (OPC) on a design pattern to generate a correction pattern, and manufacturing the photomask having the correction pattern. The step of performing the OPC includes dividing the design pattern into a plurality of segments, producing a hash value for each of the plurality of segments, and generating the correction pattern by applying a first correction bias to ones of the plurality of segments having a same hash value, wherein at least two of the plurality of segments have the same hash value. The step of producing the hash value includes generating a key segment in a target segment, creating a query region around the key segment, and producing the hash value for the target segment based on a pattern image in the query region.