公开(公告)号：US20240419084A1

公开(公告)日：2024-12-19

申请号：US18442205

申请日：2024-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： HEUNGSUK OH ,  SANGWOOK KIM ,  HEE-JUN LEE ,  JEEEUN JUNG ,  WOO-YONG CHO

IPC: G03F7/00 ,  G03F1/36

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes performing an optical proximity correction (OPC) on a design pattern of a layout and forming a photoresist pattern on a substrate using a photomask manufacture based the corrected layout. The performing of the OPC includes analyzing a cell hierarchy to choose a representative cell in the layout, dividing the design pattern in the representative cell into a plurality of segments including first segments, choosing a first unique segment, which represents the first segments, from the plurality of segments, generating a first correction bias of the first unique segment, applying the first correction bias to all of the first segments to generate a correction pattern, and applying a correction result of the representative cell to other cells that are included in the layout and are of a same type as the representative cell.

公开(公告)号：US20230125680A1

公开(公告)日：2023-04-27

申请号：US17510652

申请日：2021-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： USEONG KIM ,  Bayram YENIKAYA ,  Mindy LEE ,  Xin ZHOU ,  HEE-JUN LEE ,  WOO-YONG CHO

IPC: G06F30/398 ,  G06K9/82 ,  G06K9/46

Abstract: Disclosed is an operating method of an electronic device for manufacture of a semiconductor device. The operating method includes receiving a layout image of the semiconductor device, generating an intermediate image by generating assist features based on main features of the layout image, evaluating a process result by performing simulation based on the intermediate image, and correcting the intermediate image by correcting shapes of the main features and/or the assist features of the intermediate image based on the process result.

公开(公告)号：US20210165333A1

公开(公告)日：2021-06-03

申请号：US16911819

申请日：2020-06-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： WOO-YONG CHO ,  SANGWOOK KIM ,  JAEWON YANG

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/308

Abstract: Disclosed are reticle fabrication methods and semiconductor device fabrication methods. The reticle fabrication method includes performing a photolithography process on a test substrate using a first reticle having first patterns, measuring the test substrate to obtain measured images, designing a second reticle having second patterns, redesigning the second reticle based on a margin of the photolithography process, and manufacturing the redesigned second reticle. Redesigning the second reticle includes obtaining sample images from the measured images when the first patterns are the same as the second patterns, obtaining contour images that have contours of sample patterns in the sample images, overlapping the contours to obtain a contour overlay value, and comparing the contour overlay value with a reference value to determine defects of the second patterns.