公开(公告)号：US20220179323A1

公开(公告)日：2022-06-09

申请号：US17497106

申请日：2021-10-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： PILSOO KANG ,  SANGWOOK KIM ,  SANGHUN KIM

IPC: G03F7/20 ,  G03F1/36 ,  G06F30/398 ,  H01L21/027 ,  H01L21/033

Abstract: A method of fabricating a semiconductor device includes performing an optical proximity correction (OPC) operation on a layout and forming a photoresist pattern on a substrate using a photomask that is manufactured with the layout corrected by the OPC operation. The OPC operation includes sectioning the layout into a low-level patch and a high-level patch, performing a first OPC operation on the low-level patch, the first OPC operation including generating a first boundary correction pattern of a curvilinear shape on a boundary between the low-level patch and the high-level patch, performing a second OPC operation on the high-level patch, the second OPC operation including a second boundary correction pattern of a curvilinear shape on the boundary, and conforming the first boundary correction pattern and the second boundary correction pattern to each other to generate a conformed boundary correction pattern of a curvilinear shape.

公开(公告)号：US20240419084A1

公开(公告)日：2024-12-19

申请号：US18442205

申请日：2024-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： HEUNGSUK OH ,  SANGWOOK KIM ,  HEE-JUN LEE ,  JEEEUN JUNG ,  WOO-YONG CHO

IPC: G03F7/00 ,  G03F1/36

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes performing an optical proximity correction (OPC) on a design pattern of a layout and forming a photoresist pattern on a substrate using a photomask manufacture based the corrected layout. The performing of the OPC includes analyzing a cell hierarchy to choose a representative cell in the layout, dividing the design pattern in the representative cell into a plurality of segments including first segments, choosing a first unique segment, which represents the first segments, from the plurality of segments, generating a first correction bias of the first unique segment, applying the first correction bias to all of the first segments to generate a correction pattern, and applying a correction result of the representative cell to other cells that are included in the layout and are of a same type as the representative cell.

公开(公告)号：US20240176227A1

公开(公告)日：2024-05-30

申请号：US18330729

申请日：2023-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HEUNGSUK OH ,  Joobyoung KIM ,  SANGWOOK KIM ,  HEE-JUN LEE ,  JEEEUN JUNG ,  KYU-BIN HAN

IPC: G03F1/36 ,  H01L21/32

CPC classification number: G03F1/36 ,  H01L21/32

Abstract: A photomask fabrication method comprising performing an optical proximity correction (OPC) on a design pattern to generate a correction pattern, and manufacturing the photomask having the correction pattern. The step of performing the OPC includes dividing the design pattern into a plurality of segments, producing a hash value for each of the plurality of segments, and generating the correction pattern by applying a first correction bias to ones of the plurality of segments having a same hash value, wherein at least two of the plurality of segments have the same hash value. The step of producing the hash value includes generating a key segment in a target segment, creating a query region around the key segment, and producing the hash value for the target segment based on a pattern image in the query region.

公开(公告)号：US20210165333A1

公开(公告)日：2021-06-03

申请号：US16911819

申请日：2020-06-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： WOO-YONG CHO ,  SANGWOOK KIM ,  JAEWON YANG

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/308

Abstract: Disclosed are reticle fabrication methods and semiconductor device fabrication methods. The reticle fabrication method includes performing a photolithography process on a test substrate using a first reticle having first patterns, measuring the test substrate to obtain measured images, designing a second reticle having second patterns, redesigning the second reticle based on a margin of the photolithography process, and manufacturing the redesigned second reticle. Redesigning the second reticle includes obtaining sample images from the measured images when the first patterns are the same as the second patterns, obtaining contour images that have contours of sample patterns in the sample images, overlapping the contours to obtain a contour overlay value, and comparing the contour overlay value with a reference value to determine defects of the second patterns.

公开(公告)号：US20160110103A1

公开(公告)日：2016-04-21

申请号：US14791714

申请日：2015-07-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNG-WON JEONG ,  SANGWOOK KIM ,  JOONWON LEE ,  JINKYU JEONG ,  HWANJU KIM

IPC: G06F3/06

CPC classification number: G06F3/061 ,  G06F3/0659 ,  G06F3/0688 ,  G06F12/0284 ,  G06F12/08 ,  G06F2212/1016

Abstract: A method of operating a data processing system includes transmitting process information indicating that a first process is classified as a critical process or a non-critical process to a kernel area, wherein the process information is generated in an application area, and the application area and the kernel area define a host. When the first process is classified as a critical process based on the process information, a first fastpath write signal is provided, using the kernel area, to a memory system to perform a fastpath write operation of first data for performing the first process. When the first process is classified as a non-critical process, a first slowpath write signal is provided to the memory system to perform a slowpath write operation of the first data. The fastpath write operation has a higher write speed than the slowpath write operation.

Abstract translation: 一种操作数据处理系统的方法包括：向核心区域发送指示第一过程被分类为关键过程或非关键过程的过程信息，其中在应用区域中生成过程信息，以及应用区域和 内核区域定义一个主机。 当基于过程信息将第一过程分类为关键过程时，使用内核区域向存储器系统提供第一快速写入信号，以执行用于执行第一处理的第一数据的快速路径写入操作。 当第一过程被分类为非关键过程时，向存储器系统提供第一慢路写信号以执行第一数据的慢路写操作。 快速写入操作的写入速度比慢速写入操作高。