公开(公告)号：US20130147022A1

公开(公告)日：2013-06-13

申请号：US13706960

申请日：2012-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-soo YOON ,  Jongwon HONG ,  Insun PARK ,  Jongmyeong LEE ,  Seung-Wook CHOI

IPC: H01L29/06

CPC classification number: H01L29/0607 ,  H01L23/3192 ,  H01L23/562 ,  H01L27/108 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device may include an interlayer insulating layer containing hydrogen and a first passivation layer configured to prevent or inhibit an out-gassing of the hydrogen. In the method, a second passivation layer configured to control a warpage characteristic of a wafer may be formed on the first passivation layer.

Abstract translation: 半导体器件可以包括含有氢的层间绝缘层和被配置为防止或抑制氢的排气的第一钝化层。 在该方法中，可以在第一钝化层上形成用于控制晶片的翘曲特性的第二钝化层。

公开(公告)号：US20180051375A1

公开(公告)日：2018-02-22

申请号：US15469212

申请日：2017-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minjong KIM ,  Seonggil PARK ,  Jaebeom PARK ,  Jung-soo YOON ,  Keeyoung JUN ,  Choongrae CHO ,  Jongwon HONG

IPC: C23C16/50 ,  C23C16/04 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01J37/32

CPC classification number: C23C16/50 ,  C23C16/04 ,  C23C16/45565 ,  C23C16/4586 ,  C23C16/52 ,  H01J37/32366 ,  H01J37/3244 ,  H01J37/3255 ,  H01J37/32715 ,  H01J37/32724

Abstract: Disclosed is a substrate processing apparatus. The substrate processing apparatus comprises a process chamber providing an inner space where a substrate is treated, a support unit disposed in the inner space and supporting the substrate, and a gas supply unit providing the inner space with a process gas required for generating plasma. The support unit comprises a base having a top surface on which the substrate is placed, a heater disposed in the base, and a coating layer formed on the top surface of the base.

公开(公告)号：US20140225251A1

公开(公告)日：2014-08-14

申请号：US14134043

申请日：2013-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang-Hee LEE ,  Jongmin BAEK ,  Kyu-Hee HAN ,  Gilheyun CHOI ,  Jongwon HONG

IPC: H01L23/28 ,  H01L23/48

CPC classification number: H01L23/4821 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/28 ,  H01L23/48 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/0001

Abstract: Semiconductor devices, and methods of fabricating the same, include first conductive lines on a substrate, and a first molding layer covering the first conductive lines. The first conductive lines have air gaps between adjacent first conductive lines. Sidewalls of the first conductive lines and a bottom surface of the first molding layer collectively define a first gap region of each of the air gaps. The sidewalls of the first conductive lines and a top surface of the first molding layer collectively define a second air gap region of each of the air gaps.

Abstract translation: 半导体器件及其制造方法包括在基板上的第一导线和覆盖第一导线的第一成型层。 第一导线在相邻的第一导线之间具有气隙。 第一导电线的侧壁和第一模制层的底表面共同限定每个气隙的第一间隙区域。 第一导电线的侧壁和第一模制层的顶表面共同限定每个气隙的第二气隙区域。