公开(公告)号：US10692879B2

公开(公告)日：2020-06-23

申请号：US16260388

申请日：2019-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hun Lee ,  Jong-Ho Park ,  Joon-Hee Lee ,  Hee-Jueng Lee

IPC: H01L27/148 ,  H01L27/11573 ,  H01L27/11582 ,  H01L29/04 ,  H01L27/11565 ,  H01L27/11575

Abstract: A memory device includes a memory cell on a first region of a substrate. An active region is in a second region neighboring the first region of the substrate, and an extension direction of the active region has an acute angle with the direction of the substrate. A transistor serving as a peripheral circuit is on the second region of the substrate. In the memory device, defects or failures due to a crystal defects or a dislocation of the substrate may decrease.

公开(公告)号：US09613741B2

公开(公告)日：2017-04-04

申请号：US14603860

申请日：2015-01-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Oui-serg Kim ,  Sang-hoon Kim ,  Hyo-soo Kim ,  Kun-bum Park ,  Jong-Ho Park ,  Young-hwan Yoon ,  Jeong-sik Choi

IPC: H01F7/13 ,  H01F7/20

CPC classification number: H01F7/206 ,  H01F2007/208

Abstract: An electromagnetic actuator includes a first body which includes a biased permanent magnet, a magnetic path control device which is disposed to adjust a magnetic path produced by the biased permanent magnet, at least one core which is disposed to face the biased permanent magnet and the magnetic path control device, and a coil which is wound on the at least one core so as to reinforce or cancel the magnetic path produced by the biased permanent magnet; and a second body which is separated from the biased permanent magnet and the magnetic path control device when the at least one core is between the second body and at least one of the biased permanent magnet and the magnetic path control device.

公开(公告)号：US10204918B2

公开(公告)日：2019-02-12

申请号：US15285709

申请日：2016-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hun Lee ,  Jong-Ho Park ,  Joon-Hee Lee ,  Hee-Jueng Lee

IPC: H01L27/148 ,  H01L27/11573 ,  H01L27/11582 ,  H01L29/04 ,  H01L27/11565 ,  H01L27/11575

Abstract: A memory device includes a memory cell on a first region of a substrate. An active region is in a second region neighboring the first region of the substrate, and an extension direction of the active region has an acute angle with the direction of the substrate. A transistor serving as a peripheral circuit is on the second region of the substrate. In the memory device, defects or failures due to a crystal defects or a dislocation of the substrate may decrease.