公开(公告)号：US10692879B2

公开(公告)日：2020-06-23

申请号：US16260388

申请日：2019-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hun Lee ,  Jong-Ho Park ,  Joon-Hee Lee ,  Hee-Jueng Lee

IPC: H01L27/148 ,  H01L27/11573 ,  H01L27/11582 ,  H01L29/04 ,  H01L27/11565 ,  H01L27/11575

Abstract: A memory device includes a memory cell on a first region of a substrate. An active region is in a second region neighboring the first region of the substrate, and an extension direction of the active region has an acute angle with the direction of the substrate. A transistor serving as a peripheral circuit is on the second region of the substrate. In the memory device, defects or failures due to a crystal defects or a dislocation of the substrate may decrease.

公开(公告)号：US10204918B2

公开(公告)日：2019-02-12

申请号：US15285709

申请日：2016-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hun Lee ,  Jong-Ho Park ,  Joon-Hee Lee ,  Hee-Jueng Lee

IPC: H01L27/148 ,  H01L27/11573 ,  H01L27/11582 ,  H01L29/04 ,  H01L27/11565 ,  H01L27/11575

Abstract: A memory device includes a memory cell on a first region of a substrate. An active region is in a second region neighboring the first region of the substrate, and an extension direction of the active region has an acute angle with the direction of the substrate. A transistor serving as a peripheral circuit is on the second region of the substrate. In the memory device, defects or failures due to a crystal defects or a dislocation of the substrate may decrease.