公开(公告)号：US10890331B2

公开(公告)日：2021-01-12

申请号：US15672852

申请日：2017-08-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Ju Kim

IPC: F24C3/12 ,  F24C7/08 ,  G05G1/10 ,  H01H19/02 ,  F24C15/10 ,  H05B3/68 ,  F24C7/00 ,  F24C15/20 ,  H05B1/00

Abstract: A cooking appliance includes a knob assembly to emit light to improve an aesthetic feel and user convenience. The cooking appliance includes a main body having at least one heating source, a panel disposed in the main body and provided with a through hole, and a knob assembly coupled to the panel. The knob assembly includes a knob, at least one light source configured to emit light, a first light guide passing through the through hole and arranged to guide the light emitted from the light source, and a second light guide configured to guide the light guided by the first light guide to an outside of the knob.

公开(公告)号：US09892977B2

公开(公告)日：2018-02-13

申请号：US15270502

申请日：2016-09-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Woo Pae ,  Hyun Chul Sagong ,  Jin Ju Kim ,  June Kyun Park

IPC: H01L21/82 ,  H01L21/30 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/823821 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/32139 ,  H01L21/823807 ,  H01L21/823828 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656

Abstract: A method of generating a fin of a FinFET includes depositing a first hard mask layer on or above a first dummy gate and a second dummy gate, generating first spacers and second spacers by etching the first hard mask layer, removing only the first spacers, depositing a second hard mask layer, generating third spacers and fourth spacers by etching the second hard mask layer, removing the first dummy gate and the second dummy gate, generating first fins using the third spacers, and generating second fins using the second spacers and the fourth spacers.

公开(公告)号：US20170140997A1

公开(公告)日：2017-05-18

申请号：US15270502

申请日：2016-09-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Woo Pae ,  Hyun Chul Sagong ,  Jin Ju Kim ,  June Kyun Park

IPC: H01L21/8238 ,  H01L21/308 ,  H01L21/3213 ,  H01L29/66 ,  H01L21/311

CPC classification number: H01L21/823821 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/32139 ,  H01L21/823807 ,  H01L21/823828 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656

Abstract: A method of generating a fin of a FinFET includes depositing a first hard mask layer on or above a first dummy gate and a second dummy gate, generating first spacers and second spacers by etching the first hard mask layer, removing only the first spacers, depositing a second hard mask layer, generating third spacers and fourth spacers by etching the second hard mask layer, removing the first dummy gate and the second dummy gate, generating first fins using the third spacers, and generating second fins using the second spacers and the fourth spacers.