公开(公告)号：US20180081556A1

公开(公告)日：2018-03-22

申请号：US15681574

申请日：2017-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngmin LEE ,  Ji-Seung YOUN ,  Sungho SEO ,  Hyuntae PARK ,  Hwaseok OH ,  JinHyeok CHOI

IPC: G06F3/06

CPC classification number: G06F3/0607 ,  G06F3/061 ,  G06F3/064 ,  G06F3/0661 ,  G06F3/0683 ,  G06F12/0246 ,  G06F2212/7201 ,  G06F2212/7202 ,  G06F2212/7203 ,  G06F2212/7207

Abstract: Disclosed is a storage device which includes a nonvolatile memory device and a controller. The controller communicates with a host through a first port, communicates with an external storage device through a second port, and controls the nonvolatile memory device based on first mapping information. The controller is configured to receive second mapping information from the external storage device, receive first write data from the host and to selectively transmit first write data to the external storage device based on the second mapping information.

公开(公告)号：US20150262683A1

公开(公告)日：2015-09-17

申请号：US14637879

申请日：2015-03-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-Seung YOUN ,  Hwa-Seok OH ,  Seok-Won AHN ,  Young-Wook KIM

IPC: G11C16/10 ,  G11C16/26 ,  G11C16/08

CPC classification number: G11C16/10 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/26 ,  H01L27/11582

Abstract: A method of programming a memory device includes generating a row selection signal according to a command type of a command received from a memory controller, loading data to page buffers corresponding to bit lines assigned by the column selection signal, and programming memory cells connected to a word line assigned by the row selection signal based on the data loaded to the page buffers. The column selection signal being generated to selectively jump a portion of the page buffers corresponding to the bit lines according to the command type.

Abstract translation: 一种对存储器件进行编程的方法包括根据从存储器控制器接收的命令的命令类型生成行选择信号，将数据加载到与列选择信号分配的位线相对应的页缓冲器，以及连接到存储器单元的编程存储器单元 基于加载到页面缓冲器的数据，由行选择信号分配的字线。 生成列选择信号，以根据命令类型选择性地跳转对应于位线的页缓冲器的一部分。