公开(公告)号：US20240105425A1

公开(公告)日：2024-03-28

申请号：US18244571

申请日：2023-09-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungwan Yoo ,  Jeongyeon Lee ,  Dohyung Kim ,  Jaehong Park ,  Dongchan Lim

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01J37/32422 ,  H01J37/32522 ,  H01J37/32568 ,  H01J37/32715 ,  H01L21/02274 ,  H01L21/67098

Abstract: A substrate processing apparatus including a first chamber configured to accommodate a substrate therein and a second chamber including a heater provided in an internal space thereof, wherein the first chamber includes a target assembly configured to fix a target including a deposition material, a first ion gun configured to irradiate an ion beam onto the target to discharge deposition particles, which are ions of the deposition material, to the substrate, and a second ion gun configured to irradiate a hydrogen ion beam toward the substrate, the second ion gun includes a plasma generator configured to generate plasma, and a first grid electrode and a second grid electrode each configured to extract ions from the container, and the second chamber is configured to be provided with the substrate, on which the hydrogen ion beam has been irradiated, and perform thermal treatment on the substrate.

公开(公告)号：US12224163B2

公开(公告)日：2025-02-11

申请号：US18234123

申请日：2023-08-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SeungWan Yoo ,  Jeongyeon Lee ,  Dohyung Kim ,  Jaehong Park ,  Dong-Chan Lim

IPC: H01J37/32 ,  C23C14/34 ,  H01J27/02 ,  H01J37/08 ,  H01J37/305 ,  H01J37/34

Abstract: An ion beam source including a plasma chamber including a plasma generating space, a plasma generator configured to generate plasma in the plasma generating space, a first grid connected to the plasma chamber, a second grid connected to the plasma chamber, and a first grid driver connected to the first grid. The first grid driver may be configured to move the first grid relative to the second grid.