公开(公告)号：US20170103997A1

公开(公告)日：2017-04-13

申请号：US15285682

申请日：2016-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： WOONG-SEOP LEE ,  JONGYOON CHOI ,  JINHYUN SHIN ,  DONG-SIK LEE

IPC: H01L27/115 ,  H01L21/02 ,  H01L29/423 ,  H01L29/10 ,  H01L29/04

CPC classification number: H01L27/11582 ,  H01L21/0243 ,  H01L21/02636 ,  H01L27/11565 ,  H01L27/11568 ,  H01L29/04 ,  H01L29/1037 ,  H01L29/1054 ,  H01L29/4234 ,  H01L29/7827

Abstract: A method of fabricating a semiconductor device can include forming a channel hole in a vertical stack of alternating insulating and sacrificial layers to form a recess in a substrate. A selectively epitaxial growth can be performed to provide a lower semiconductor pattern in the recess using material of the substrate as a seed and a recess can be formed to penetrate an upper surface of the lower semiconductor pattern via the channel hole.