公开(公告)号：US20250169083A1

公开(公告)日：2025-05-22

申请号：US18944349

申请日：2024-11-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： IN JUNG ,  JONGHYUK KIM ,  BOK-YEON WON

IPC: H10B80/00 ,  H01L23/00 ,  H01L25/065 ,  H01L25/18

Abstract: A semiconductor device including: a substrate having a portion in a cell array region and a portion in a peripheral circuit region; a peripheral circuit structure including a peripheral circuit, and peripheral circuit wiring connected to the peripheral circuit; and a cell array structure, wherein the cell array structure in the cell array region includes a plurality of bit lines extending in a first direction, a plurality of word lines extending on the plurality of bit lines in a second direction, an active pattern disposed between a first word line and a second word line, a cell landing pad connected to the active pattern, and a cell capacitor, and the cell array structure in the peripheral circuit region includes a conductive pad disposed at the same level as an end of the cell capacitor, and a lower conductive contact plug connecting the conductive pad and the peripheral circuit structure.