公开(公告)号：US11309048B2

公开(公告)日：2022-04-19

申请号：US17027007

申请日：2020-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hong-Mook Choi ,  Hye Soo Lee ,  Ji-Su Kang ,  Hyun Il Kim

IPC: G11C29/18 ,  G11C29/10 ,  G06F9/448 ,  G11C7/10 ,  G11C16/14 ,  G11C29/50

Abstract: A method of testing using a memory test apparatus connected to a memory device includes receiving a test command. When the test command is a finite state machine (FSM) operation command, the memory device is tested in accordance with the FSM operation command, and an operation is performed to output a result depending on a pass/fail result. But, when the test command is a direct access command, an auto-operation test of input data is performed in a test region according to received address information, and a test result is output, which may include output data with fail information or the auto-operation.