Invention Grant
- Patent Title: Memory test apparatus and testing method thereof including built-in self test (BIST)
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Application No.: US17027007Application Date: 2020-09-21
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Publication No.: US11309048B2Publication Date: 2022-04-19
- Inventor: Hong-Mook Choi , Hye Soo Lee , Ji-Su Kang , Hyun Il Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2020-0016200 20200211
- Main IPC: G11C29/18
- IPC: G11C29/18 ; G11C29/10 ; G06F9/448 ; G11C7/10 ; G11C16/14 ; G11C29/50

Abstract:
A method of testing using a memory test apparatus connected to a memory device includes receiving a test command. When the test command is a finite state machine (FSM) operation command, the memory device is tested in accordance with the FSM operation command, and an operation is performed to output a result depending on a pass/fail result. But, when the test command is a direct access command, an auto-operation test of input data is performed in a test region according to received address information, and a test result is output, which may include output data with fail information or the auto-operation.
Public/Granted literature
- US20210249096A1 MEMORY TEST APPARATUS AND TESTING METHOD THEREOF Public/Granted day:2021-08-12
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