公开(公告)号：US10777553B2

公开(公告)日：2020-09-15

申请号：US16363050

申请日：2019-03-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-hyuck Choi ,  Hae-wang Lee ,  Hyoun-jee Ha ,  Chul-hong Park

IPC: H01L27/088 ,  H01L23/528 ,  H01L29/08 ,  H01L23/535 ,  H01L23/522 ,  H01L29/45 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/06 ,  H01L21/768 ,  H01L21/762 ,  H01L29/417 ,  H01L27/092 ,  H03K19/0944

Abstract: An integrated circuit device may include a fin-type active region extending in a first direction on a substrate; an insulating separation structure extending in a second direction that intersects the first direction on the fin-type active region; a pair of split gate lines spaced apart from each other with the insulating separation structure therebetween and extending in the second direction to be aligned with the insulating separation structure; a pair of source/drain regions located on the fin-type active region and spaced apart from each other with the insulating separation structure therebetween; and a jumper contact located over the insulating separation structure and connected between the pair of source/drain regions.

公开(公告)号：US11335682B2

公开(公告)日：2022-05-17

申请号：US16920589

申请日：2020-07-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-hyuck Choi ,  Hae-wang Lee ,  Hyoun-jee Ha ,  Chul-hong Park

IPC: H01L27/088 ,  H01L23/528 ,  H01L29/08 ,  H01L23/535 ,  H01L23/522 ,  H01L29/45 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/06 ,  H01L21/768 ,  H01L21/762 ,  H01L29/417 ,  H01L27/092 ,  H03K19/0944

Abstract: An integrated circuit device may include a fin-type active region extending in a first direction on a substrate; an insulating separation structure extending in a second direction that intersects the first direction on the fin-type active region; a pair of split gate lines spaced apart from each other with the insulating separation structure therebetween and extending in the second direction to be aligned with the insulating separation structure; a pair of source/drain regions located on the fin-type active region and spaced apart from each other with the insulating separation structure therebetween; and a jumper contact located over the insulating separation structure and connected between the pair of source/drain regions.

公开(公告)号：US10319720B2

公开(公告)日：2019-06-11

申请号：US15849030

申请日：2017-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-hyuck Choi ,  Hae-wang Lee ,  Hyoun-jee Ha ,  Chul-hong Park

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/45 ,  H01L29/66 ,  H01L23/522 ,  H01L23/528 ,  H01L23/535 ,  H01L27/088 ,  H01L21/8234 ,  H03K19/0944

Abstract: An integrated circuit device may include a fin-type active region extending in a first direction on a substrate; an insulating separation structure extending in a second direction that intersects the first direction on the fin-type active region; a pair of split gate lines spaced apart from each other with the insulating separation structure therebetween and extending in the second direction to be aligned with the insulating separation structure; a pair of source/drain regions located on the fin-type active region and spaced apart from each other with the insulating separation structure therebetween; and a jumper contact located over the insulating separation structure and connected between the pair of source/drain regions.