公开(公告)号：US20230373058A1

公开(公告)日：2023-11-23

申请号：US18083007

申请日：2022-12-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donghoon KWON ,  Hyojung KIM

IPC: B24B37/34 ,  B24B37/10 ,  B24B7/22 ,  H01L21/67 ,  H01L21/687 ,  B08B3/02

CPC classification number: B24B37/34 ,  B24B37/107 ,  B24B7/228 ,  H01L21/67051 ,  H01L21/68764 ,  B08B3/022

Abstract: A semiconductor substrate grinding apparatus including a chuck table configured to mount and fix a semiconductor substrate, so that a back side of the semiconductor substrate faces upwardly and rotates in one direction; a grinding wheel on the chuck table configured to grind the back side of the semiconductor substrate; a cleaning liquid supplier on the chuck table, spaced apart from the grinding wheel, and configured to supply a cleaning liquid to the back side of the semiconductor substrate for cleaning by-products generated by grinding the semiconductor substrate; a slurry supplier on the chuck table, adjacent to the cleaning liquid supplier, and configured to supply a slurry to the back side of the semiconductor substrate; and a polishing wheel on the chuck table, spaced apart from the slurry supplier, and configured to perform chemical mechanical polishing on the back side of the semiconductor substrate using the slurry.

公开(公告)号：US20130171807A1

公开(公告)日：2013-07-04

申请号：US13678002

申请日：2012-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongryeol YOO ,  Seong Hoon JEONG ,  Bonghyun KIM ,  Hyojung KIM ,  Dongwoon SHIN ,  Soojin HONG

IPC: H01L21/02

CPC classification number: H01L21/02381 ,  H01L21/26513 ,  H01L21/823842

Abstract: Provided are a semiconductor device having dual transistors, and methods of fabricating a semiconductor device, including sequentially forming an insulating layer and a polysilicon layer on a substrate having a first region and a second region, forming a first mask to cover the polysilicon layer on the second region, injecting at least one n-type impurity into the polysilicon layer on the first region to form an N-region, injecting nitrogen into the N-region, forming a second mask to cover the N-region, and injecting at least one p-type impurity into the polysilicon layer on the second region to form a P-region.

Abstract translation: 提供了具有双晶体管的半导体器件和制造半导体器件的方法，包括在具有第一区域和第二区域的衬底上顺序地形成绝缘层和多晶硅层，形成第一掩模以覆盖所述多晶硅层 将至少一个n型杂质注入到所述第一区域上的所述多晶硅层中以形成N区，向所述N区注入氮，形成覆盖所述N区的第二掩模，以及注入至少一个 p型杂质进入第二区域的多晶硅层，形成P区。