公开(公告)号：US20220102405A1

公开(公告)日：2022-03-31

申请号：US17239291

申请日：2021-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae KIM ,  Chang Kyu LEE ,  Dongmo IM ,  Ju-eun KIM ,  Miseon PARK ,  Jungim CHOE ,  Soojin HONG

IPC: H01L27/146

Abstract: An image sensor is provided and may include a semiconductor substrate having a surface and including trench, the trench extending from the surface into the semiconductor substrate, an insulating pattern provided in the trench and a doped region in the semiconductor substrate and on the insulating patterns. The doped region includes a side portion on a side surface of the insulating pattern, and a bottom portion on a bottom surface of the insulating pattern. A thickness of the side portion of the doped region is from 85% to 115% of a thickness of the bottom portion of the doped region, and a number of dopants per unit area in the side portion of the doped region is from 85% to 115% of a number of dopants per unit area in the bottom portion.

公开(公告)号：US20130171807A1

公开(公告)日：2013-07-04

申请号：US13678002

申请日：2012-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongryeol YOO ,  Seong Hoon JEONG ,  Bonghyun KIM ,  Hyojung KIM ,  Dongwoon SHIN ,  Soojin HONG

IPC: H01L21/02

CPC classification number: H01L21/02381 ,  H01L21/26513 ,  H01L21/823842

Abstract: Provided are a semiconductor device having dual transistors, and methods of fabricating a semiconductor device, including sequentially forming an insulating layer and a polysilicon layer on a substrate having a first region and a second region, forming a first mask to cover the polysilicon layer on the second region, injecting at least one n-type impurity into the polysilicon layer on the first region to form an N-region, injecting nitrogen into the N-region, forming a second mask to cover the N-region, and injecting at least one p-type impurity into the polysilicon layer on the second region to form a P-region.

Abstract translation: 提供了具有双晶体管的半导体器件和制造半导体器件的方法，包括在具有第一区域和第二区域的衬底上顺序地形成绝缘层和多晶硅层，形成第一掩模以覆盖所述多晶硅层 将至少一个n型杂质注入到所述第一区域上的所述多晶硅层中以形成N区，向所述N区注入氮，形成覆盖所述N区的第二掩模，以及注入至少一个 p型杂质进入第二区域的多晶硅层，形成P区。

公开(公告)号：US20220173143A1

公开(公告)日：2022-06-02

申请号：US17518756

申请日：2021-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae KIM ,  Miseon PARK ,  Soojin HONG

IPC: H01L27/146

Abstract: An image sensor includes a substrate including a first surface, a second surface opposite to the first surface, and unit pixels, a deep device isolation portion disposed in the substrate to isolate the unit pixels from each other, and a transfer gate disposed on the first surface and in each of the unit pixels. The deep device isolation portion includes a first conductive pattern extending from the first surface toward the second surface, a first insulating pattern interposed between the first conductive pattern and the substrate, a second conductive pattern extending from the second surface toward the first conductive pattern, and a first fixed charge layer interposed between the second conductive pattern and the substrate.