公开(公告)号：US20220063096A1

公开(公告)日：2022-03-03

申请号：US17420859

申请日：2020-01-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeyong JU ,  Hyeran LEE ,  Hyunjung NAM ,  Miyoung KIM ,  Jaebum PARK ,  Joonah PARK

IPC: B25J9/16 ,  B25J19/02 ,  B25J11/00

Abstract: Provided are a mobile robot and a method of driving the same. A method in which the mobile robot moves along with a user includes photographing surroundings of the mobile robot, detecting the user from an image captured by the photographing, tracking a location of the user within the image as the user moves, predicting a movement direction of the user, based on a last location of the user within the image, when the tracking of the location of the user is stopped, and determining a traveling path of the mobile robot, based on the predicted movement direction of the user.

公开(公告)号：US20230164980A1

公开(公告)日：2023-05-25

申请号：US17829446

申请日：2022-06-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeran LEE ,  Kiseok LEE

IPC: H01L27/108 ,  H01L27/22 ,  H01L27/24

CPC classification number: H01L27/10823 ,  H01L27/10814 ,  H01L27/10876 ,  H01L27/228 ,  H01L27/2436

Abstract: A semiconductor device includes a substrate including an active portion defined by a device isolation pattern; a word line in the substrate, the word line crossing the active portion and extending in a first direction; a bit line crossing the active portion and the word line and extending in a second direction intersecting the first direction; a first pad on an end portion of the active portion; a first contact on the first pad and adjacent to the bit line in the first direction; and an insulating separation pattern on the word line and adjacent to the first contact in the second direction, wherein the first contact includes a barrier pattern on the first pad, and a conductive pattern vertically extending from the barrier pattern, and a side surface of the conductive pattern of the first contact is in direct contact with the insulating separation pattern.

公开(公告)号：US20250063727A1

公开(公告)日：2025-02-20

申请号：US18680554

申请日：2024-05-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minhee CHO ,  Hyeran LEE ,  Masayuki TERAI

IPC: H10B12/00 ,  H01L29/66 ,  H01L29/786

Abstract: A semiconductor device includes an upper conductive line extending in a first horizontal direction over a substrate, a channel layer facing the upper conductive line in a second horizontal direction that is perpendicular to the first horizontal direction, a gate dielectric film between the channel layer and the upper conductive line, a conductive contact pattern including a lower surface, which is in contact with an upper surface of the channel layer, and sidewalls including a first sidewall, which faces the upper conductive line in the second horizontal direction, and an insulating spacer including a first portion between the upper conductive line and the conductive contact pattern in the second horizontal direction.