公开(公告)号：US12048150B2

公开(公告)日：2024-07-23

申请号：US17377848

申请日：2021-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Hwan Lee ,  Yong Seok Kim ,  Il Gweon Kim ,  Hyun Cheol Kim ,  Hyeoung Won Seo ,  Sung Won Yoo ,  Jae Ho Hong

IPC: H10B43/20 ,  H10B43/10

CPC classification number: H10B43/20 ,  H10B43/10

Abstract: A semiconductor memory device having improved electrical characteristics is provided. The semiconductor memory device comprises a first semiconductor pattern separated from a substrate in a first direction, a first gate structure extending in the first direction and penetrating the first semiconductor pattern, a first conductive connecting line connected to the first semiconductor pattern and extending in a second direction different from the first direction, and a second conductive connecting line connected to the first semiconductor pattern. The first gate structure is between the first conductive connecting line and the second conductive connecting line, the first gate structure includes a first gate electrode and a first gate insulating film, and the first gate insulating film includes a first charge holding film contacting with the first semiconductor pattern.