公开(公告)号：US11740553B2

公开(公告)日：2023-08-29

申请号：US17510665

申请日：2021-10-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hungbae Ahn ,  Sangoh Park ,  Sunggon Jung

IPC: H01L21/033 ,  H01L21/768 ,  H10B12/00 ,  G03F1/70

CPC classification number: G03F1/70 ,  H01L21/0332 ,  H01L21/76895 ,  H10B12/03 ,  H10B12/482 ,  H10B12/485 ,  H10B12/488

Abstract: A method of manufacturing a photomask set includes: preparing a mask layout, the mask layout including a plurality of first layout patterns apart from one another in a first region, wherein distances between center points of three first layout patterns adjacent to one another from among the plurality of first layout patterns respectively have different values; grouping pairs of first layout patterns, in which a distance between two first layout patterns adjacent to each other does not have a smallest value, and splitting the mask layout pattern into at least two mask layouts; and forming a photomask set including at least two photomasks each including a mask pattern corresponding to the first layout pattern included in each of the mask layout patterns split into at least two mask layouts.

公开(公告)号：US12260164B2

公开(公告)日：2025-03-25

申请号：US17703338

申请日：2022-03-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hungbae Ahn ,  Sangoh Park ,  Jinho Lee

IPC: G06F30/30 ,  G06F30/392 ,  G06F30/398 ,  G06F119/18

Abstract: A pattern layout design method includes performing optical proximity correction (OPC) for a mask layout, thereby creating a corrected layout. Creation of the corrected layout includes creating a first corrected layout through grid snapping for an oblique edge of a mask layout designed on a grid layout, and performing optical proximity correction (OPC) for the first corrected layout, thereby creating a second corrected layout. Creation of the first corrected layout includes creating a first divisional point for the oblique edge or a residual edge, and shifting the first divisional point to one of four reference points adjacent to the first divisional point, thereby creating a first varied divisional point.

公开(公告)号：US11506983B2

公开(公告)日：2022-11-22

申请号：US17185140

申请日：2021-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hungbae Ahn ,  Sangoh Park ,  Seunghune Yang

IPC: G03F7/20 ,  H01L27/02

Abstract: A method of manufacturing a mask may include identifying an error pattern of final patterns formed on a substrate, correcting a first target pattern on the basis of the error pattern, fracturing a first mask layout into a plurality of first segments on the basis of the corrected first target pattern, and correcting the first mask layout by biasing a plurality of first target segments corresponding to a first final target among the plurality of segments. The first mask layout may include a first extension pattern, final targets disposed in zigzags, and the first final target corresponding to the error pattern, and each of the plurality of first segments may corresponds to one of the final targets.

公开(公告)号：US20240143886A1

公开(公告)日：2024-05-02

申请号：US18342011

申请日：2023-06-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyeonghwan Kang ,  Jungmin Kim ,  Hungbae Ahn

IPC: G06F30/392 ,  G06T7/00 ,  G06T7/13 ,  G06T7/73

CPC classification number: G06F30/392 ,  G06T7/0006 ,  G06T7/001 ,  G06T7/13 ,  G06T7/73 ,  G06T2207/20081 ,  G06T2207/30148

Abstract: a method of correcting a layout for semiconductor process includes receiving a design layout including a layout pattern for the semiconductor process to form a process pattern of a semiconductor device, where the design layout comprises a pixel-based image associated with the layout pattern and edge information associated with the layout pattern; performing a first layout correction operation on the design layout using a first machine learning model that takes the pixel-based image as input; performing a second layout correction operation on the design layout using a second machine learning model different from the first machine learning model that takes the edge information as input; and obtaining a corrected design layout including a corrected layout pattern corresponding to the layout pattern based on a result of the first layout correction operation and a result of the second layout correction operation.

公开(公告)号：US11226552B2

公开(公告)日：2022-01-18

申请号：US16872444

申请日：2020-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hungbae Ahn ,  Sangoh Park ,  Sunggon Jung

IPC: H01L27/108 ,  H01L21/033 ,  H01L21/768 ,  G03F1/70

Abstract: A method of manufacturing a photomask set includes: preparing a mask layout, the mask layout including a plurality of first layout patterns apart from one another in a first region, wherein distances between center points of three first layout patterns adjacent to one another from among the plurality of first layout patterns respectively have different values; grouping pairs of first layout patterns, in which a distance between two first layout patterns adjacent to each other does not have a smallest value, and splitting the mask layout pattern into at least two mask layouts; and forming a photomask set including at least two photomasks each including a mask pattern corresponding to the first layout pattern included in each of the mask layout patterns split into at least two mask layouts.