公开(公告)号：US20240323571A1

公开(公告)日：2024-09-26

申请号：US18614416

申请日：2024-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daeyun KIM ,  Hoyong Lee

IPC: H04N25/76 ,  G01S7/481 ,  G01S17/894 ,  H01L27/146 ,  H04N13/289 ,  H04N25/53 ,  H04N25/77

CPC classification number: H04N25/7795 ,  G01S7/4816 ,  G01S17/894 ,  H01L27/14636 ,  H04N25/53 ,  H04N25/77 ,  H01L27/14643 ,  H04N13/289

Abstract: An image sensor is disclosed. The image sensor includes: a demodulation clock generation circuit configured to generate M demodulation clock signals having N phases; a buffer circuit including M signal lines configured to transfer each of the M demodulation clock signals; and a pixel array including a plurality of pixels, wherein a pixel of the plurality of pixels has M taps and is configured to receive M demodulation signals passing through the M signal lines as inputs. Each of the M demodulation signals is conducted by each of the M signal lines during an integration time of one frame of the pixel, and M and N are integers greater than or equal to 2.