公开(公告)号：US11171211B1

公开(公告)日：2021-11-09

申请号：US16900788

申请日：2020-06-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hong-Hyun Park ,  Zhengping Jiang ,  Hesameddin Ilatikhameneh ,  Woosung Choi ,  Chihak Ahn

IPC: H01L29/10 ,  H01L29/08 ,  H01L21/02 ,  H01L29/04 ,  H01L29/66

Abstract: A method of manufacturing a p-type MOSFET includes depositing a channel material to form a channel region, forming a source region and a drain region on each side of the channel region along a first direction, depositing a gate oxide layer on the channel region along a second direction crossing the first direction, and depositing a gate electrode on the gate oxide. The channel material includes a group IV element or III-V semiconductor compound and have a diamond or zincblende cubic crystal structure. A direction of the crystal structure is parallel to the second direction. Two adjacent atoms on an out-most atomic layer of the channel region along the first direction are connected to each other via a single intervening atom, and an interface between the gate oxide layer and the channel region has a surface roughness of 1 angstrom or lower.

公开(公告)号：US20210351270A1

公开(公告)日：2021-11-11

申请号：US16900788

申请日：2020-06-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hong-Hyun Park ,  Zhengping Jiang ,  Hesameddin Ilatikhameneh ,  Woosung Choi ,  Chihak Ahn

IPC: H01L29/10 ,  H01L29/08 ,  H01L21/02 ,  H01L29/04 ,  H01L29/423 ,  H01L29/78

Abstract: A method of manufacturing a p-type MOSFET includes depositing a channel material to form a channel region, forming a source region and a drain region on each side of the channel region along a first direction, depositing a gate oxide layer on the channel region along a second direction crossing the first direction, and depositing a gate electrode on the gate oxide. The channel material includes a group IV element or III-V semiconductor compound and have a diamond or zincblende cubic crystal structure. A direction of the crystal structure is parallel to the second direction. Two adjacent atoms on an out-most atomic layer of the channel region along the first direction are connected to each other via a single intervening atom, and an interface between the gate oxide layer and the channel region has a surface roughness of 1 angstrom or lower.