公开(公告)号：US20250031405A1

公开(公告)日：2025-01-23

申请号：US18906471

申请日：2024-10-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hojun CHOI ,  Ji Seong KIM ,  Min Cheol OH ,  Ki-Il KIM

IPC: H01L29/78 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66

Abstract: There is provided a semiconductor device capable of improving electrical characteristics and integration density. The semiconductor device includes an active pattern protruding from a substrate, the active pattern including long sidewalls extending in a first direction and opposite to each other in a second direction, a lower epitaxial pattern on the substrate and covering a part of the active pattern, a gate electrode on the lower epitaxial pattern and extending along the long sidewalls of the active pattern, and an upper epitaxial pattern on the active pattern and connected to an upper surface of the active pattern. The active pattern includes short sidewalls connecting with the long sidewalls of the active pattern, and at least one of the short sidewalls of the active pattern has a curved surface.

公开(公告)号：US20250014995A1

公开(公告)日：2025-01-09

申请号：US18663381

申请日：2024-05-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwoo LEE ,  Hojun CHOI ,  Sutae KIM ,  Hyelim KIM ,  Seung CHOI

IPC: H01L23/528 ,  H01L23/522 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device includes a plurality of active patterns respectively extending on a substrate in a first direction, a separation pattern extending on the substrate in a second direction, and dividing each of the plurality of active patterns into first and second active patterns, the separation pattern including a first separation pattern and a second separation pattern, the second separation pattern being shifted from the first separation pattern in the first direction to partially overlap the first separation pattern in the second direction, first and second dummy gate structures on first and second sides of the separation pattern, respectively, and extending along corresponding end portions of the first and second active patterns in the second direction, respectively, and a plurality of first and second gate structures crossing portions of the first and second active patterns, respectively, and extending in the second direction.

公开(公告)号：US20240274598A1

公开(公告)日：2024-08-15

申请号：US18500636

申请日：2023-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwoo LEE ,  Hojun CHOI ,  Sutae KIM

IPC: H01L27/06 ,  H01L21/306 ,  H01L23/48 ,  H01L23/522 ,  H01L29/732

CPC classification number: H01L27/0623 ,  H01L21/30625 ,  H01L23/481 ,  H01L23/5226 ,  H01L29/7322

Abstract: The present disclosure relates to an integrated circuit element and a manufacturing method thereof. An integrated circuit element may include a substrate including a first region and a second region, a first element in the first region of the substrate and configured to generate an electric field in a horizontal direction, and a second element in the second region of the substrate and configured to generate an electric field is formed in a vertical direction, wherein a thickness of the second region of the substrate is thicker than a thickness of the first region.

公开(公告)号：US20220320335A1

公开(公告)日：2022-10-06

申请号：US17571949

申请日：2022-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hojun CHOI ,  Ji Seong KIM ,  Min Cheol OH ,  Ki-Il KIM

IPC: H01L29/78 ,  H01L27/092 ,  H01L29/08 ,  H01L29/423 ,  H01L21/8238 ,  H01L29/66

Abstract: There is provided a semiconductor device capable of improving electrical characteristics and integration density. The semiconductor device includes an active pattern protruding from a substrate, the active pattern including long sidewalls extending in a first direction and opposite to each other in a second direction, a lower epitaxial pattern on the substrate and covering a part of the active pattern, a gate electrode on the lower epitaxial pattern and extending along the long sidewalls of the active pattern, and an upper epitaxial pattern on the active pattern and connected to an upper surface of the active pattern. The active pattern includes short sidewalls connecting with the long sidewalls of the active pattern, and at least one of the short sidewalls of the active pattern has a curved surface.