公开(公告)号：US20240203693A1

公开(公告)日：2024-06-20

申请号：US18532468

申请日：2023-12-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hee Won MIN ,  Song Yun KANG ,  Ju Ho KIM ,  Seok Hwan BAE ,  Dong Yun YEO ,  Kui Hyun YOON ,  Seung Bin LIM ,  Ji Yun JU ,  Seo Yeon CHOI

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32642 ,  H01J37/32715 ,  H01J2237/006 ,  H01J2237/334

Abstract: A plasma processing equipment includes: an electrostatic chuck on which a substrate is provided; a gas filling unit provided between the substrate and the electrostatic chuck; a gas supply unit extending through the electrostatic chuck and connected to the gas filling unit, the gas supply unit comprising a plurality of first nonconductive balls; and a focus ring provided along an edge of the electrostatic chuck.

公开(公告)号：US20220068613A1

公开(公告)日：2022-03-03

申请号：US17221891

申请日：2021-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok Hwan BAE ,  Dong Hoon KIM ,  Byeong Sang KIM ,  Hak Young KIM ,  Hee Won MIN

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/683

Abstract: Provided is plasma processing equipment comprising a substrate support, a focus ring disposed along an edge of the upper surface of the substrate support and including a fluid hole passing through a main body, an insulating ring surrounding an outer sidewall of the substrate support and including an inner side surface facing the outer sidewall of the substrate support, an outer side surface, and an upper surface connecting the inner and outer side surfaces. and including upper and lower end portions having different heights, and a connection end portion connecting the upper and lower end portions, a liner surrounding the outer side surface of the insulating ring and a baffle disposed on an upper surface of the liner, wherein a fluid passing through the fluid hole flows along the upper surface, and the baffle generates a pressure difference of the fluid between the upper and lower end portions.