公开(公告)号：US09007827B2

公开(公告)日：2015-04-14

申请号：US14062932

申请日：2013-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Woo Jung ,  Hee Tak Shin ,  Jinwoo Jung ,  Sung Woo Jo

IPC: G11C11/34 ,  G11C16/10

CPC classification number: G11C16/16 ,  G11C11/5628 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/10 ,  G11C2211/5641

Abstract: A memory system includes a nonvolatile memory device and a memory controller. The nonvolatile memory device includes first memory blocks configured to store m-bit data per cell and second memory blocks configured to store n-bit data per cell. The memory controller is configured to control the nonvolatile memory device to close an open word line generated in a second memory block of the second memory blocks when a program operation is performed on the second memory block.

Abstract translation: 存储器系统包括非易失性存储器件和存储器控制器。 非易失性存储器件包括被配置为存储每个单元的m位数据的第一存储器块和被配置为存储每个单元n位数据的第二存储器块。 存储器控制器被配置为当对第二存储器块执行编程操作时，控制非易失性存储器件关闭在第二存储器块的第二存储器块中产生的打开字线。

公开(公告)号：US09183938B2

公开(公告)日：2015-11-10

申请号：US14684683

申请日：2015-04-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Woo Jung ,  Hee Tak Shin ,  Jinwoo Jung ,  Sung Woo Jo

IPC: G11C11/34 ,  G11C16/16 ,  G11C16/04

CPC classification number: G11C16/16 ,  G11C11/5628 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/10 ,  G11C2211/5641

Abstract: A memory system includes a nonvolatile memory device and a memory controller. The nonvolatile memory device includes first memory blocks configured to store m-bit data per cell and second memory blocks configured to store n-bit data per cell. The memory controller is configured to control the nonvolatile memory device to close an open word line generated in a second memory block of the second memory blocks when a program operation is performed on the second memory block.