Invention Grant
- Patent Title: Nonvolatile memory device and method of programming nonvolatile memory device
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Application No.: US14684683Application Date: 2015-04-13
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Publication No.: US09183938B2Publication Date: 2015-11-10
- Inventor: Young Woo Jung , Hee Tak Shin , Jinwoo Jung , Sung Woo Jo
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2012-0122383 20121031
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/16 ; G11C16/04

Abstract:
A memory system includes a nonvolatile memory device and a memory controller. The nonvolatile memory device includes first memory blocks configured to store m-bit data per cell and second memory blocks configured to store n-bit data per cell. The memory controller is configured to control the nonvolatile memory device to close an open word line generated in a second memory block of the second memory blocks when a program operation is performed on the second memory block.
Public/Granted literature
- US20150221382A1 NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING NONVOLATILE MEMORY DEVICE Public/Granted day:2015-08-06
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