公开(公告)号：US11733604B2

公开(公告)日：2023-08-22

申请号：US17236440

申请日：2021-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyeong Seop Kim ,  Noyoung Chung

IPC: G03F1/36 ,  H01L21/027 ,  H01L21/285 ,  G06F30/392 ,  H01L21/8238

CPC classification number: G03F1/36 ,  G06F30/392 ,  H01L21/0274 ,  H01L21/28518 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823871

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes performing an optical proximity correction (OPC) on design patterns of a layout to generate a corrected layout, and forming a photoresist pattern on a substrate using a photomask manufactured based on the corrected layout. The OPC comprises generating develop targets for the design patterns, respectively, choosing first object patterns based on distances between the develop targets, performing a first OPC operation on the design patterns based on a mask rule to generate first correction patterns, choosing second object patterns by considering distances between the first correction patterns and a target error of each of the first correction patterns, and performing a second OPC operation on the first and second object patterns to generate second correction patterns, the performing the second OPC not based on the mask rule.