公开(公告)号：US09805799B2

公开(公告)日：2017-10-31

申请号：US13786501

申请日：2013-03-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joon-Ho Lee ,  Gwang-Ok Go ,  Kyung-Ho Shin ,  Mi-Hyang Lee

IPC: G06F12/00 ,  G11C16/10 ,  G06F12/02

CPC classification number: G11C16/10 ,  G06F12/0246 ,  G06F12/0253 ,  G06F2212/1036 ,  G06F2212/7205 ,  G06F2212/7208 ,  G11C11/5621 ,  G11C2207/2236 ,  G11C2211/5641

Abstract: A nonvolatile memory device includes a first area of single-level cells (SLCs) and a second area of multi-level cells (MLCs). The device determines whether a free block can be created by copying data between memory blocks of the first area. Upon determining that the free memory block can be created by copying data between the memory blocks of the first area, the device copies the data between the memory blocks of the first area to create the free memory block. Otherwise, the device selects at least one memory block from the first area and allocates the selected memory block as free memory block by copying the data stored in the selected memory block of the first area to the second area.

公开(公告)号：US12174735B2

公开(公告)日：2024-12-24

申请号：US18049380

申请日：2022-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongki Kim ,  Ilkueon Kang ,  Gwang-Ok Go ,  Junseok Park

IPC: G06F12/02 ,  G06F12/0891

Abstract: Disclosed is a method of operating a storage controller, the storage controller communicating with a host and a non-volatile memory device. The method includes receiving a first erase request from the host, the first erase request being for a first zone of a plurality of zones of the non-volatile memory device, loading first allocation list information of the first zone from an allocation list table based on the first erase request, deallocating memory blocks allocated to the first zone based on the first allocation list information, wherein sequential physical page numbers of the memory blocks are respectively mapped onto sequential logical page numbers, and providing the non-volatile memory device with a physical erase request for the deallocated memory blocks of the first zone.

公开(公告)号：US20230236964A1

公开(公告)日：2023-07-27

申请号：US18049380

申请日：2022-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongki KIM ,  IIkueon Kang ,  Gwang-Ok Go ,  Junseok Park

IPC: G06F12/02 ,  G06F12/0891

CPC classification number: G06F12/0246 ,  G06F12/0891

Abstract: Disclosed is a method of operating a storage controller, the storage controller communicating with a host and a non-volatile memory device. The method includes receiving a first erase request from the host, the first erase request being for a first zone of a plurality of zones of the non-volatile memory device, loading first allocation list information of the first zone from an allocation list table based on the first erase request, deallocating memory blocks allocated to the first zone based on the first allocation list information, wherein sequential physical page numbers of the memory blocks are respectively mapped onto sequential logical page numbers, and providing the non-volatile memory device with a physical erase request for the deallocated memory blocks of the first zone.