公开(公告)号：US20230163164A1

公开(公告)日：2023-05-25

申请号：US18093948

申请日：2023-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGOO KANG ,  HYUNSUK LEE ,  GIHEE CHO ,  SANGHYUCK AHN

IPC: H01L23/522 ,  H01G4/12

CPC classification number: H01L28/91 ,  H01G4/1254 ,  H01L23/5222 ,  H01L28/56 ,  H01L2221/1089 ,  H01L2221/1084

Abstract: An integrated circuit device includes a capacitor structure, wherein the capacitor structure includes: a bottom electrode over a substrate; a supporter on a sidewall of the bottom electrode; a dielectric layer on the bottom electrode and the supporter; and a top electrode on the dielectric layer and covering the bottom electrode. The bottom electrode comprises: a base electrode layer over the substrate and extending in a first direction that is perpendicular to a top surface of the substrate, and a conductive capping layer including niobium nitride that is between a sidewall of the base electrode layer and the dielectric layer, and also between a top surface of the base electrode layer and the dielectric layer.

公开(公告)号：US20240186369A1

公开(公告)日：2024-06-06

申请号：US18439785

申请日：2024-02-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGOO KANG ,  HYUNSUK LEE ,  GIHEE CHO ,  SANGHYUCK AHN

IPC: H01G4/12 ,  H01L23/522

CPC classification number: H01L28/91 ,  H01G4/1254 ,  H01L23/5222 ,  H01L28/56 ,  H01L2221/1084 ,  H01L2221/1089

Abstract: An integrated circuit device includes a capacitor structure, wherein the capacitor structure includes: a bottom electrode over a substrate; a supporter on a sidewall of the bottom electrode; a dielectric layer on the bottom electrode and the supporter; and a top electrode on the dielectric layer and covering the bottom electrode. The bottom electrode comprises: a base electrode layer over the substrate and extending in a first direction that is perpendicular to a top surface of the substrate, and a conductive capping layer including niobium nitride that is between a sidewall of the base electrode layer and the dielectric layer, and also between a top surface of the base electrode layer and the dielectric layer.

公开(公告)号：US20230084276A1

公开(公告)日：2023-03-16

申请号：US18057894

申请日：2022-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： GIHEE CHO ,  Jungoo Kang ,  Sangyeol Kang ,  Hyunsuk Lee

IPC: H01L49/02

Abstract: Semiconductor devices including a capacitor and methods of forming the same are provided. The semiconductor devices may include a capacitor that include a lower electrode, an upper electrode on the lower electrode, and a dielectric layer extending between the lower electrode and the upper electrode. The lower electrode may include a doped region that contacts the dielectric layer, and the doped region of the lower electrode is configured to increase a capacitance of the capacitor.

公开(公告)号：US20240186368A1

公开(公告)日：2024-06-06

申请号：US18434954

申请日：2024-02-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： GIHEE CHO ,  JUNGOO KANG ,  SANGYEOL KANG ,  HYUNSUK LEE

IPC: H01G4/30 ,  H10B12/00

CPC classification number: H01L28/60 ,  H10B12/315

Abstract: Semiconductor devices including a capacitor and methods of forming the same are provided. The semiconductor devices may include a capacitor that include a lower electrode, an upper electrode on the lower electrode, and a dielectric layer extending between the lower electrode and the upper electrode. The lower electrode may include a doped region that contacts the dielectric layer, and the doped region of the lower electrode is configured to increase a capacitance of the capacitor.

公开(公告)号：US20230223407A1

公开(公告)日：2023-07-13

申请号：US17852040

申请日：2022-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： GIHEE CHO ,  SANGHYUCK AHN ,  HYUN-SUK LEE ,  JUNGOO KANG ,  JIN-SU LEE ,  HONGSIK CHAE

IPC: H01L27/10 ,  H01L49/02 ,  G11C8/14

CPC classification number: H01L27/101 ,  H01L28/60 ,  G11C8/14

Abstract: A semiconductor device includes; a bottom electrode on a substrate, a supporting pattern between the bottom electrode and an adjacent bottom electrode, a top electrode covering the bottom electrode and the supporting pattern, and a dielectric layer between the bottom electrode and the top electrode and between the supporting pattern and the top electrode. The bottom electrode may include a first portion including a seam and a second portion on the first portion, a top end of the second portion may be disposed at a height lower than an upper surface of the supporting pattern, and a portion of a bottom end of the second portion may be exposed to the seam.