公开(公告)号：US20230223407A1

公开(公告)日：2023-07-13

申请号：US17852040

申请日：2022-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： GIHEE CHO ,  SANGHYUCK AHN ,  HYUN-SUK LEE ,  JUNGOO KANG ,  JIN-SU LEE ,  HONGSIK CHAE

IPC: H01L27/10 ,  H01L49/02 ,  G11C8/14

CPC classification number: H01L27/101 ,  H01L28/60 ,  G11C8/14

Abstract: A semiconductor device includes; a bottom electrode on a substrate, a supporting pattern between the bottom electrode and an adjacent bottom electrode, a top electrode covering the bottom electrode and the supporting pattern, and a dielectric layer between the bottom electrode and the top electrode and between the supporting pattern and the top electrode. The bottom electrode may include a first portion including a seam and a second portion on the first portion, a top end of the second portion may be disposed at a height lower than an upper surface of the supporting pattern, and a portion of a bottom end of the second portion may be exposed to the seam.