公开(公告)号：US20140239478A1

公开(公告)日：2014-08-28

申请号：US13803457

申请日：2013-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-Seok HONG ,  Sang-Uk HAN ,  Eun-Kyoung CHOI ,  Jong-Youn KIM ,  Hae-Jung YU ,  Cha-Jea JO

IPC: H01L23/538

CPC classification number: H01L21/561 ,  H01L21/6836 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/4334 ,  H01L24/05 ,  H01L24/06 ,  H01L24/14 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81005 ,  H01L2224/83005 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2224/05552

Abstract: A semiconductor device includes a first semiconductor chip at least partially overlapping a second semiconductor chip. The first semiconductor chip is coupled to a substrate and has a first width, and the second semiconductor chip has a second width. The device also includes a heat sink coupled to the second semiconductor chip and having a third width different from at least one of the first width or the second width. A package molding section at least partially overlaps a first area of the heat sink and does not overlap a second area of the heat sink which includes a top surface of the heat sink.

Abstract translation: 半导体器件包括至少部分地与第二半导体芯片重叠的第一半导体芯片。 第一半导体芯片耦合到衬底并且具有第一宽度，并且第二半导体芯片具有第二宽度。 该装置还包括耦合到第二半导体芯片的散热器，并具有不同于第一宽度或第二宽度中的至少一个的第三宽度。 封装模制部分至少部分地与散热器的第一区域重叠，并且不与包括散热器的顶表面的散热器的第二区域重叠。

公开(公告)号：US20210358866A1

公开(公告)日：2021-11-18

申请号：US17134978

申请日：2020-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun-Kyoung CHOI

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/18 ,  H01L23/31 ,  H01L23/367 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L25/00

Abstract: A semiconductor package includes a substrate. A first semiconductor chip is disposed on the substrate and is electrically connected to the substrate. The first semiconductor chip comprises a first sidewall extending in a first direction, a second sidewall extending in a second direction that crosses the first direction, and a third sidewall disposed between the first sidewall and the second sidewall and configured to connect the first sidewall and the second side wall. The third sidewall has a curved surface shape. A second semiconductor chip is disposed on the first semiconductor chip and is electrically connected to the first semiconductor chip.

公开(公告)号：US20150137345A1

公开(公告)日：2015-05-21

申请号：US14504309

申请日：2014-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-Kyoung CHOI ,  Sang-Uk HAN ,  Tae-Je CHO

IPC: H01L25/065 ,  H01L23/538 ,  H01L23/367

CPC classification number: H01L25/0657 ,  H01L23/04 ,  H01L23/367 ,  H01L23/42 ,  H01L23/49816 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/15311 ,  H01L2924/00

Abstract: A semiconductor package includes a heat spreader. The semiconductor package includes a substrate, a first semiconductor chip disposed on the substrate, and a second semiconductor chip disposed on the first semiconductor chip. The heat spreader may be formed on the first semiconductor chip. A thermal interfacial material (TIM) layer may be formed to be in contact with the first semiconductor chip and the heat spreader and may cover side surfaces of the second semiconductor chip. Heat generated by the first semiconductor chip may be emitted through the TIM layer and the heat spreader. Thermal stress caused by a difference in coefficients of thermal expansion (CTEs) between the substrate and the first semiconductor chip may be distributed to ensure structural stability.

Abstract translation: 半导体封装包括散热器。 半导体封装包括衬底，设置在衬底上的第一半导体芯片和设置在第一半导体芯片上的第二半导体芯片。 散热器可以形成在第一半导体芯片上。 热界面材料（TIM）层可以形成为与第一半导体芯片和散热器接触并且可以覆盖第二半导体芯片的侧表面。 可以通过TIM层和散热器发射由第一半导体芯片产生的热量。 可以分配由基板和第一半导体芯片之间的热膨胀系数（CTE）引起的热应力，以确保结构稳定性。

公开(公告)号：US20130299969A1

公开(公告)日：2013-11-14

申请号：US13835969

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Won KIM ,  Kwang-Chul CHOI ,  Hyun-Jung SONG ,  Cha-Jea JO ,  Eun-Kyoung CHOI ,  Ji-Seok HONG

IPC: H01L23/498 ,  H01L21/56

CPC classification number: H01L23/49811 ,  H01L21/56 ,  H01L21/561 ,  H01L21/563 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L29/0657 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06565 ,  H01L2924/15156 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2224/81 ,  H01L2924/00

Abstract: A semiconductor package includes a first semiconductor chip, a second semiconductor chip and a sealing member. The first semiconductor chip includes a substrate having a first surface and a second surface opposite to the first surface and having an opening that extends in a predetermined depth from the second surface, and a plurality of through electrodes extending in a thickness direction from the first surface, end portions of the through electrodes being exposed through a bottom surface of the opening. The second semiconductor chip is received in the opening and mounted on the bottom surface of the opening. The sealing member covers the second semiconductor chip in the opening.

Abstract translation: 半导体封装包括第一半导体芯片，第二半导体芯片和密封构件。 第一半导体芯片包括具有与第一表面相对的第一表面和第二表面的基板，并且具有从第二表面以预定深度延伸的开口，以及从厚度方向从第一表面延伸的多个贯穿电极 通孔的端部通过开口的底表面露出。 第二半导体芯片被容纳在开口中并安装在开口的底表面上。 密封构件覆盖开口中的第二半导体芯片。