公开(公告)号：US20230402375A1

公开(公告)日：2023-12-14

申请号：US17849345

申请日：2022-06-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Sung KIM ,  Hyoeun Park ,  Kang-ill Seo

IPC: H01L23/528 ,  H01L23/522 ,  H01L21/768 ,  H01L21/3213

CPC classification number: H01L23/5283 ,  H01L21/32139 ,  H01L21/76838 ,  H01L23/5226

Abstract: A interconnect structure for an integrated circuit may include: a metal line including a plurality of sections having different thicknesses along a 1st direction; and a plurality of vias respectively protruding from the plurality of sections of the metal line.

公开(公告)号：US20230343839A1

公开(公告)日：2023-10-26

申请号：US17885237

申请日：2022-08-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Sung KIM ,  Jaejik BAEK ,  Wonhyuk HONG ,  Myunghoon JUNG ,  Jongjin LEE ,  Kang-ill SEO

IPC: H01L29/417 ,  H01L23/528 ,  H01L29/40

CPC classification number: H01L29/4175 ,  H01L23/5286 ,  H01L29/401 ,  H01L29/0673

Abstract: Provided is a semiconductor device that includes: at least one transistor, a front side structure, and a back side structure, the front side structure being disposed opposite to the back side structure with respect to the transistor; and a front via formed at a side of the transistor and connecting the front side structure to the back side structure, wherein the front via is formed in a via hole formed of a lower via hole and an upper via hole vertically connected to each other, and wherein the via hole has a bent structure at a side surface thereof where the lower via hole is connected to the upper via hole.

公开(公告)号：US20170107317A1

公开(公告)日：2017-04-20

申请号：US15225201

申请日：2016-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEUNGCHUL KWON ,  Jeongju PARK ,  Shi-yong YI ,  Eun Sung KIM ,  Kyeongmi LEE ,  Joona BANG ,  Sanghoon WOO

IPC: C08F293/00 ,  H01L21/027

CPC classification number: C08F293/005 ,  B82Y40/00 ,  C08F12/20 ,  C08F2438/03 ,  G03F7/0002 ,  H01L21/0271

Abstract: A block copolymer includes a first polymer block and a second polymer block having different structures, and one of the first polymer block and the second polymer block has a halogen-substituted structure.