-
公开(公告)号：US20230285897A1
公开(公告)日：2023-09-14
申请号：US18100209
申请日：2023-01-23
发明人： Mira Park , Hoigu Jang , Jiwoong Shin , Kieung Lee , Yeonju Ji , Jiyoung Kim , Joonseok Min , Dusik Bae , Dongil Shin , Sangyoon Shin , Minseon Lee , Seungbin Lee
IPC分类号： B01D53/82 , B01D53/04 , B01D53/72 , G03F7/20 , B01J20/20 , B01J20/18 , B01J20/26 , B01J20/28 , H01L21/67
CPC分类号： B01D53/82 , B01D53/04 , B01D53/72 , B01J20/18 , B01J20/20 , B01J20/261 , B01J20/28004 , B01J20/28035 , B01J20/2804 , B01J20/2808 , B01J20/28083 , G03F7/70858 , H01L21/67017 , B01D2251/512 , B01D2253/102 , B01D2253/108 , B01D2253/206 , B01D2253/25 , B01D2253/304 , B01D2253/308 , B01D2257/556
摘要： A gas purifying filter includes a first gas permeable body having a gas inlet surface; a first adsorption layer disposed on the first gas permeable body and including activated carbon on which a phosphoric acid-based compound satisfying the following Formula 1 is supported; a second adsorption layer disposed on the first adsorption layer and including a hydrophobic zeolite having a SiO2/Al2O3 value of about 50 or more; and a second gas permeable body disposed on the second adsorption layer and having a gas outlet surface,
where n is an integer greater than or equal to 1.-
2.发明授权公开(公告)号：US10431506B2
公开(公告)日：2019-10-01
申请号：US15848896
申请日：2017-12-20
发明人： Dusik Bae , Yoonmi Lee , Hyeogki Kim , Kyoungsil Park , JungDae Park
IPC分类号： H01L21/66 , H01L21/311 , G01N21/65 , H01L21/67 , H01L21/033 , G01N21/956
摘要： Disclosed are a method of processing a substrate and a method of fabricating a semiconductor device using the same. The method of processing a substrate comprises forming a mask layer on a substrate, inspecting the mask layer, and forming a mask pattern based on an inspection result of the mask layer. The operation of inspecting the mask layer comprises using Raman spectrum analysis to detect defects in the mask layer.
-
搜索结果
2 条记录 (耗时 0.014 秒)
