公开(公告)号：US09490160B2

公开(公告)日：2016-11-08

申请号：US14178959

申请日：2014-02-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Jin Lee

IPC: H01L21/76 ,  H01L21/762 ,  H01L27/115

CPC classification number: H01L21/76237 ,  H01L27/115

Abstract: A method of manufacturing a semiconductor device, the method including providing a substrate; forming a field trench in the substrate; and forming a diffusion barrier region under the field trench, wherein the diffusion barrier region includes carbon.

Abstract translation: 一种制造半导体器件的方法，所述方法包括提供衬底; 在衬底中形成场沟; 以及在所述场沟下形成扩散阻挡区域，其中所述扩散阻挡区域包括碳。

公开(公告)号：US09082647B2

公开(公告)日：2015-07-14

申请号：US14465982

申请日：2014-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Ho Jang ,  Dong-Jin Lee ,  Bong-Soo Kim ,  Jun-Hee Lim ,  Joon Han

IPC: H01L27/108 ,  H01L27/12 ,  H01L27/13

CPC classification number: H01L27/108 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10844 ,  H01L27/10855 ,  H01L27/10864 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888 ,  H01L27/10894 ,  H01L27/12 ,  H01L27/13 ,  H01L29/785

Abstract: There is provided a semiconductor device. The semiconductor device may include multiple contacts plugs, an insulation layer pattern, a metal oxide layer pattern, a metal pattern and a metal line. The contact plugs contact a substrate. The insulation layer pattern is formed between the contact plugs and has a top surface lower than those of the contact plugs. The metal oxide layer pattern is formed on the insulation layer pattern, and has a dielectric constant higher than that of silicon oxide. The metal pattern is formed on the metal oxide layer pattern and contacts sidewalls of the contact plugs. The metal line contacts top surfaces of the contact plugs and the metal pattern and extends thereon.

Abstract translation: 提供了一种半导体器件。 半导体器件可以包括多个触点插头，绝缘层图案，金属氧化物层图案，金属图案和金属线。 接触插头接触基板。 绝缘层图案形成在接触插塞之间，并且具有比接触插塞低的顶表面。 金属氧化物层图案形成在绝缘层图案上，并且具有比氧化硅更高的介电常数。 金属图案形成在金属氧化物层图案上并接触接触插塞的侧壁。 金属线接触接触插塞的顶表面和金属图案并在其上延伸。

公开(公告)号：US09196729B2

公开(公告)日：2015-11-24

申请号：US14254576

申请日：2014-04-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Jin Lee ,  Jun-Hee Lim ,  Kyung-Eun Kim

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/66 ,  H01L27/108

CPC classification number: H01L29/7838 ,  H01L27/10823 ,  H01L27/10876 ,  H01L29/4236 ,  H01L29/66477

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including an active region on a substrate, the active region being defined by a field region; gate trenches in the active region of the substrate; gate structures respectively formed in the gate trenches; and at least one carrier barrier layer in the substrate and under the gate trenches.

Abstract translation: 一种半导体器件和制造半导体器件的方法，所述器件包括在衬底上的有源区，所述有源区由场区限定; 在衬底的有源区中的栅极沟槽; 分别形成在栅极沟槽中的栅极结构; 以及衬底中的至少一个载流子阻挡层和栅极沟槽之下。