公开(公告)号：US20190393347A1

公开(公告)日：2019-12-26

申请号：US16213186

申请日：2018-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： DONG WOO KIM ,  Do Hee Kim ,  Hyo Jin Kim ,  Kang Hun Moon ,  Si Hyung Lee

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/08 ,  H01L29/165 ,  H01L29/417 ,  H01L29/45 ,  H01L29/36 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/308 ,  H01L21/762 ,  H01L29/66 ,  H01L21/306 ,  H01L21/02

Abstract: A semiconductor device includes a plurality of active fins on a substrate, a gate electrode intersecting the plurality of active fins, and a source/drain region on the plurality of active fins, extending on a first side and a second side of the gate electrode. The source/drain region includes lower epitaxial layers on ones of the plurality of active fins. The lower epitaxial layers include germanium (Ge) having a first concentration. An upper epitaxial layer is on the lower epitaxial layers, and includes germanium (Ge) having a second concentration that is higher than the first concentration. The lower epitaxial layers have convex upper surfaces, and are connected to each other between the active fins.