Methods of manufacturing a phase change memory device including a heat sink
    2.
    发明授权
    Methods of manufacturing a phase change memory device including a heat sink 有权
    制造包括散热器的相变存储器件的方法

    公开(公告)号:US09431610B2

    公开(公告)日:2016-08-30

    申请号:US14868350

    申请日:2015-09-28

    Abstract: A phase change memory device includes a phase change memory unit and a heat sink. The phase change memory unit includes a phase change material layer pattern, a lower electrode beneath the phase change material layer pattern configured to heat the phase change material layer pattern, and an upper electrode on the phase change material layer pattern. The heat sink configured to absorb heat from the phase change memory unit. The heat sink has a top surface lower than a top surface of the upper electrode and is spaced apart from the phase change memory unit.

    Abstract translation: 相变存储器件包括相变存储器单元和散热器。 相变存储器单元包括相变材料层图案,被配置为加热相变材料层图案的相变材料层图案下面的下电极和相变材料层图案上的上电极。 散热器被配置成从相变存储器单元吸收热量。 散热器具有比上电极的顶表面低的顶表面,并且与相变存储单元间隔开。

Patent Agency Ranking