公开(公告)号：US20160155804A1

公开(公告)日：2016-06-02

申请号：US15013647

申请日：2016-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Woo Oh ,  Shincheol Min ,  Jongwook Lee ,  Choongho Lee

IPC: H01L29/10 ,  H01L27/092 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L29/1033 ,  H01L21/02107 ,  H01L21/302 ,  H01L21/3086 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/66477 ,  H01L29/66818 ,  H01L29/785

Abstract: Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.

Abstract translation: 提供了形成场效应晶体管的方法。 该方法包括制备具有第一区域和第二区域的衬底，在第一和第二区域上形成鳍部，每个翅片部分从衬底突出并具有第一宽度，形成第一掩模图案以暴露翅片部分 并且覆盖第二区域上的翅片部分，并且改变设置在第一区域上的翅片部分的宽度。

公开(公告)号：US09443935B2

公开(公告)日：2016-09-13

申请号：US15013647

申请日：2016-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Woo Oh ,  Shincheol Min ,  Jongwook Lee ,  Choongho Lee

IPC: H01L21/336 ,  H01L29/10 ,  H01L29/66 ,  H01L21/02 ,  H01L21/302 ,  H01L21/308 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L29/1033 ,  H01L21/02107 ,  H01L21/302 ,  H01L21/3086 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/66477 ,  H01L29/66818 ,  H01L29/785

Abstract: Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.

公开(公告)号：US09287402B2

公开(公告)日：2016-03-15

申请号：US14626215

申请日：2015-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Woo Oh ,  Shincheol Min ,  Jongwook Lee ,  Choongho Lee

IPC: H01L21/336 ,  H01L29/78 ,  H01L29/66 ,  H01L21/02 ,  H01L21/302 ,  H01L21/308 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L29/1033 ,  H01L21/02107 ,  H01L21/302 ,  H01L21/3086 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/66477 ,  H01L29/66818 ,  H01L29/785

Abstract: Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.

Abstract translation: 提供了形成场效应晶体管的方法。 该方法包括制备具有第一区域和第二区域的衬底，在第一和第二区域上形成鳍部，每个翅片部分从衬底突出并具有第一宽度，形成第一掩模图案以暴露翅片部分 并且覆盖第二区域上的翅片部分，并且改变设置在第一区域上的翅片部分的宽度。

公开(公告)号：US20150162437A1

公开(公告)日：2015-06-11

申请号：US14626215

申请日：2015-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Woo Oh ,  Shincheol Min ,  Jongwook Lee ,  Choongho Lee

IPC: H01L29/78

CPC classification number: H01L29/1033 ,  H01L21/02107 ,  H01L21/302 ,  H01L21/3086 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/66477 ,  H01L29/66818 ,  H01L29/785

Abstract: Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.

Abstract translation: 提供了形成场效应晶体管的方法。 该方法包括制备具有第一区域和第二区域的衬底，在第一和第二区域上形成鳍部，每个翅片部分从衬底突出并具有第一宽度，形成第一掩模图案以暴露翅片部分 并且覆盖第二区域上的翅片部分，并且改变设置在第一区域上的翅片部分的宽度。

公开(公告)号：US08987100B2

公开(公告)日：2015-03-24

申请号：US13780527

申请日：2013-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Woo Oh ,  Shincheol Min ,  Jongwook Lee ,  Choongho Lee

IPC: H01L21/336 ,  H01L29/66 ,  H01L21/02 ,  H01L21/302 ,  H01L21/308 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L29/1033 ,  H01L21/02107 ,  H01L21/302 ,  H01L21/3086 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/66477 ,  H01L29/66818 ,  H01L29/785

Abstract: Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.

Abstract translation: 提供了形成场效应晶体管的方法。 该方法包括制备具有第一区域和第二区域的衬底，在第一和第二区域上形成鳍部，每个翅片部分从衬底突出并具有第一宽度，形成第一掩模图案以暴露翅片部分 并且覆盖第二区域上的翅片部分，并且改变设置在第一区域上的翅片部分的宽度。