公开(公告)号：US20170200823A1

公开(公告)日：2017-07-13

申请号：US15401176

申请日：2017-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Gu KANG ,  MYOUNGKYU PARK ,  CHULHO CHUNG

IPC: H01L29/78 ,  H01L29/161 ,  H01L29/08 ,  H01L29/10

CPC classification number: H01L29/7816 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823462 ,  H01L27/088 ,  H01L29/0653 ,  H01L29/0869 ,  H01L29/0886 ,  H01L29/1045 ,  H01L29/1054 ,  H01L29/1095 ,  H01L29/161 ,  H01L29/165 ,  H01L29/513 ,  H01L29/66636 ,  H01L29/66659 ,  H01L29/7833 ,  H01L29/7835

Abstract: Provided are a semiconductor device and a method of forming the same. The semiconductor device includes an active region defined by an isolation layer. A source region portion, a drain region portion and a channel region are located in the active region. The channel region includes a first portion located close to the source region portion and a second portion having a higher threshold voltage than the first portion.