-
公开(公告)号：US10203912B2
公开(公告)日：2019-02-12
申请号：US15217270
申请日：2016-07-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Byung-Hei Jun , Dong-Kun Shin
IPC: G06F3/06
Abstract: A storage device includes a non-volatile memory including a plurality of blocks; and a storage controller connected to the non-volatile memory and configured to schedule a requested task of one virtual machine of a plurality of virtual machines based on a workload contribution of the one virtual machine, the workload contribution indicating a ratio between a workload generated by the one virtual machine and a plurality of workloads generated by the plurality of virtual machines.
-
公开(公告)号：US20140208002A1
公开(公告)日：2014-07-24
申请号：US13798419
申请日：2013-03-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin-Hee Ma , Da-Woon Jung , Byung-Hei Jun
IPC: G06F12/02
CPC classification number: G11C16/349 , G06F3/0619 , G06F3/065 , G06F3/0679 , G06F11/00 , G06F11/1072 , G06F11/2056 , G06F12/0246 , G06F2212/1032 , G11C11/5628
Abstract: A multilevel cell (MLC) nonvolatile memory system including a plurality of memory cells each cell storing first bit data and second bit data, and a controller programming the plurality of memory cells on a page-by-page basis, the controller programming original data to an original block and programming copy data that is the same as the original data to a mirroring block, wherein first bit page data and second bit page data of the original data are programmed to memory cells connected to the same word line, but the first bit page data and second bit page data of the copy data are programmed to memory cells connected to different word lines.
Abstract translation: 一种多级单元（MLC）非易失性存储器系统，包括多个存储单元，每个单元存储第一位数据和第二位数据;以及控制器，在逐页的基础上对所述多个存储器单元进行编程，所述控制器将原始数据编程为 原始块和与原始数据相同的编程复制数据到镜像块，其中原始数据的第一位页数据和第二位页数据被编程到连接到同一字线的存储器单元，但是第一位 复制数据的页数据和第二位页数据被编程到连接到不同字线的存储单元。
-
3.发明授权公开(公告)号：US10671287B2
公开(公告)日：2020-06-02
申请号：US16110088
申请日：2018-08-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： In-Hwan Doh , Byung-Hei Jun , Joo-Young Hwang
IPC: G06F3/06
Abstract: A method of operating a storage device to perform a garbage collection operation on a nonvolatile memory device having a plurality of memory blocks, the storage device configured to operate based on a multi-stream scheme such that a plurality of data is written into the plurality of memory blocks based on which of a plurality of streams is associated with the plurality of data. The method may include selecting at least two memory blocks among the plurality of memory blocks as victim memory blocks such that the victim memory blocks are configured to store data associated with a same stream of the plurality of streams; and performing the garbage collection operation on the victim memory blocks.
-
公开(公告)号：US09318216B2
公开(公告)日：2016-04-19
申请号：US13798419
申请日：2013-03-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin-Hee Ma , Da-Woon Jung , Byung-Hei Jun
CPC classification number: G11C16/349 , G06F3/0619 , G06F3/065 , G06F3/0679 , G06F11/00 , G06F11/1072 , G06F11/2056 , G06F12/0246 , G06F2212/1032 , G11C11/5628
Abstract: A multilevel cell (MLC) nonvolatile memory system including a plurality of memory cells each cell storing first bit data and second bit data, and a controller programming the plurality of memory cells on a page-by-page basis, the controller programming original data to an original block and programming copy data that is the same as the original data to a mirroring block, wherein first bit page data and second bit page data of the original data are programmed to memory cells connected to the same word line, but the first bit page data and second bit page data of the copy data are programmed to memory cells connected to different word lines.
Abstract translation: 一种多级单元（MLC）非易失性存储器系统，包括多个存储单元，每个单元存储第一位数据和第二位数据;以及控制器，在逐页的基础上对所述多个存储器单元进行编程，所述控制器将原始数据编程为 原始块和与原始数据相同的编程复制数据到镜像块，其中原始数据的第一位页数据和第二位页数据被编程到连接到同一字线的存储器单元，但是第一位 复制数据的页数据和第二位页数据被编程到连接到不同字线的存储单元。
-
-
-
Search Results
4
records
(took 0.011 seconds)
