公开(公告)号：US20190139813A1

公开(公告)日：2019-05-09

申请号：US16242483

申请日：2019-01-08

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sang-Shin JANG ,  Woo-Kyung YOU ,  Kyu-Hee HAN ,  Jong-Min BAEK ,  Viet Ha NGUYEN ,  Byung-Hee KIM

IPC分类号： H01L21/768 ,  H01L23/528 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/7682 ,  H01L21/76816 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295

摘要： A semiconductor device includes a first insulating interlayer on a first region of a substrate and a second insulating interlayer on a second region of the substrate, a plurality of first wiring structures on the first insulating interlayer, the first wiring structures being spaced apart from each other, a plurality of second wiring structures filling a plurality of trenches on the second insulating interlayer, respectively, an insulation capping structure selectively on a surface of the first insulating interlayer between the first wiring structures and on a sidewall and an upper surface of each of the first wiring structures, the insulation capping structure including an insulating material, a third insulating interlayer on the first and second wiring structures, and an air gap among the first wiring structures under the third insulating interlayer.

公开(公告)号：US20190189540A1

公开(公告)日：2019-06-20

申请号：US16282682

申请日：2019-02-22

申请人： Samsung Electronics Co., Ltd.

发明人： Jin-Nam Kim ,  Tsukasa MATSUDA ,  Rak-Hwan KIM ,  Byung-Hee KIM ,  Nae-In LEE ,  Jong-Jin LEE

IPC分类号： H01L23/485 ,  H01L21/768 ,  H01L23/498 ,  H01L23/532 ,  H01L23/522

摘要： A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a first interlayer insulating layer including a first trench, on a substrate a first liner layer formed along a side wall and a bottom surface of the first trench and including noble metal, the noble metal belonging to one of a fifth period and a sixth period of a periodic chart that follows numbering of International Union of Pure and Applied Chemistry (IUPAC) and belonging to one of eighth to tenth groups of the periodic chart, and a first metal wire filling the first trench on the first liner layer, a top surface of the first metal wire having a convex shape toward a bottom surface of the first trench.

公开(公告)号：US20180130697A1

公开(公告)日：2018-05-10

申请号：US15616334

申请日：2017-06-07

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sang-Shin JANG ,  Woo-Kyung YOU ,  Kyu-Hee HAN ,  Jong-Min BAEK ,  Viet Ha NGUYEN ,  Byung-Hee KIM

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

CPC分类号： H01L21/7682 ,  H01L21/76816 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295

摘要： A semiconductor device includes a first insulating interlayer on a first region of a substrate and a second insulating interlayer on a second region of the substrate, a plurality of first wiring structures on the first insulating interlayer, the first wiring structures being spaced apart from each other, a plurality of second wiring structures filling a plurality of trenches on the second insulating interlayer, respectively, an insulation capping structure selectively on a surface of the first insulating interlayer between the first wiring structures and on a sidewall and an upper surface of each of the first wiring structures, the insulation capping structure including an insulating material, a third insulating interlayer on the first and second wiring structures, and an air gap among the first wiring structures under the third insulating interlayer.