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公开(公告)号:US10418587B2
公开(公告)日:2019-09-17
申请号:US15870337
申请日:2018-01-12
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Min Sang Kim , Seung Wook Kwon , Oh June Kwon , Hyo Jeong Kwon , Doo Hwan Kim , Woo Yong Sung
Abstract: A display device includes a substrate which includes a pixel region and a peripheral region which is provided on at least one side of the pixel region, a plurality of pixels provided in the pixel region, a passivation layer that disposed on the substrate, a light emitting element disposed on the passivation layer and which emits light, and a sealing member which covers the light emitting element. The sealing member includes a first inorganic layer disposed on the light emitting element, a lens portion disposed on the first inorganic layer and which extracts light which is emitted from the light emitting element, an organic layer disposed on the lens portion, and a second inorganic layer disposed on the organic layer.
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公开(公告)号:US10462896B1
公开(公告)日:2019-10-29
申请号:US16383986
申请日:2019-04-15
Applicant: Samsung Display Co. Ltd.
Inventor: Oh June Kwon , Seung Wook Kwon , Hyo Jeong Kwon , Doo Hwan Kim , Min Sang Kim , Chan Ho Moon , Won Je Cho
IPC: H05K1/02 , G06F1/16 , G02F1/1333 , H01L27/32 , H01L51/00
Abstract: A display device includes a flexible substrate including a bending area corresponding to an area at which the display device is bent, and a first area and a second area which is spaced apart from the first area by the bending area, a display element unit disposed in the first area of the flexible substrate; and a buffer member disposed in the bending area of the flexible substrate. The buffer member in the bending area includes: a first buffer member having a first maximum thickness, and a second buffer member having a second maximum thickness which is smaller than the first maximum thickness. Among the first buffer member and the second member, the first buffer member disposed closer to the first area and the second member disposed closer to the second area.
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公开(公告)号:US10779400B2
公开(公告)日:2020-09-15
申请号:US16852706
申请日:2020-04-20
Applicant: Samsung Display Co. Ltd.
Inventor: Oh June Kwon , Seung Wook Kwon , Hyo Jeong Kwon , Doo Hwan Kim , Min Sang Kim , Chan Ho Moon , Won Je Cho
Abstract: A display device includes a flexible substrate including a bending area corresponding to an area at which the display device is bent, and a first area and a second area which is spaced apart from the first area by the bending area, a display element unit disposed in the first area of the flexible substrate; and a buffer member disposed in the bending area of the flexible substrate. The buffer member in the bending area includes: a first buffer member having a first maximum thickness, and a second buffer member having a second maximum thickness which is smaller than the first maximum thickness. Among the first buffer member and the second member, the first buffer member disposed closer to the first area and the second member disposed closer to the second area.
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公开(公告)号:US10609829B2
公开(公告)日:2020-03-31
申请号:US15870670
申请日:2018-01-12
Applicant: Samsung Display Co., Ltd.
Inventor: Min Sang Kim , Seung Wook Kwon , Oh June Kwon , Hyo Jeong Kwon , Doo Hwan Kim
Abstract: A display device includes: a substrate including a display region and a bent region provided at a side of the display region; a first insulating layer provided on the bent region of the substrate; a second insulating layer provided on the first insulating layer, the second insulating layer including at least one opening; and a third insulating layer provided on the second insulating layer and the at least one opening, and a pixel unit to display an image is provided on the display region of the substrate.
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公开(公告)号:US10147896B2
公开(公告)日:2018-12-04
申请号:US15591257
申请日:2017-05-10
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Seung Hun Kim , Hyo Jeong Kwon , Il Hwa Hong , Seung Yong Song , Sang Hwan Cho
Abstract: An organic thin film transistor and a method of manufacturing the same, the transistor including a gate electrode; an organic semiconductor layer overlapping the gate electrode; and an insulating layer between the gate electrode and the organic semiconductor layer, the insulating layer having an organic/inorganic hybrid region, wherein the organic/inorganic hybrid region includes a polymer and an inorganic material that is chemically bonded to the polymer through a reactive group on the polymer, and the insulating layer includes a space adjacent to the polymer, the inorganic material being positioned in the space.
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