公开(公告)号：US08921230B2

公开(公告)日：2014-12-30

申请号：US13964371

申请日：2013-08-12

Applicant: Samsung Display Co., Ltd.

Inventor： Hong-Sick Park ,  Young-Jun Kim ,  Young-Woo Park ,  Wang-Woo Lee ,  Won-Guk Seo ,  Sam-Young Cho ,  Seung-Yeon Han ,  Gyu-Po Kim ,  Hyun-Cheol Shin ,  Ki-Beom Lee

IPC: H01L21/00 ,  H01L21/67 ,  H01L21/28 ,  H01L27/12 ,  C23F1/18

CPC classification number: C23F1/18 ,  H01L21/67075 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/7869

Abstract: An etchant composition includes about 25 percent by weight to about 35 percent by weight of phosphoric acid, about 3 percent by weight to about 9 percent by weight of nitric acid, about 10 percent by weight to about 20 percent by weight of acetic acid, about 5 percent by weight to about 10 percent by weight of a nitrate, about 6 percent by weight to about 15 percent by weight of a sulfonic acid, about 1 percent by weight to about 5 percent by weight of an amine compound including a carboxyl group, about 0.1 percent by weight to about 1 percent by weight of a water-soluble amino acid, about 0.01 percent by weight to about 1 percent by weight of an azole compound, and water.

Abstract translation: 蚀刻剂组合物包括约25重量％至约35重量％的磷酸，约3重量％至约9重量％的硝酸，约10重量％至约20重量％的乙酸，约 5重量％至10重量％的硝酸盐，约6重量％至约15重量％的磺酸，约1重量％至约5重量％的包含羧基的胺化合物， 约0.1重量％至约1重量％的水溶性氨基酸，约0.01重量％至约1重量％的唑化合物和水。

公开(公告)号：US20150102349A1

公开(公告)日：2015-04-16

申请号：US14242672

申请日：2014-04-01

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Wang-Woo Lee ,  Moo-Soon Ko ,  Do-Hyung Kim ,  Min-Woo Woo ,  Il-Jeong Lee ,  Jeong-Ho Lee ,  Young-Woo Park

IPC: H01L27/12

CPC classification number: H01L27/1255 ,  H01L27/1251 ,  H01L27/1288

Abstract: A thin film transistor array substrate including a first TFT including a first active layer, a gate electrode, a first source electrode and a first drain electrode, a second TFT including a second active layer, a floating gate electrode, a control gate electrode, a second source electrode, and a second drain electrode, a capacitor including a first electrode and a second electrode, and a capping layer contacting a portion of the first electrode, the capping layer and the second electrode being on a same layer, is disclosed. A method of manufacturing thin film transistor array substrate is also disclosed.

Abstract translation: 一种薄膜晶体管阵列基板，包括包括第一有源层，栅电极，第一源电极和第一漏电极的第一TFT，包括第二有源层的第二TFT，浮栅电极，控制栅电极， 第二源电极和第二漏电极，包括第一电极和第二电极的电容器，以及与第一电极，封盖层和第二电极的一部分在同一层上接触的覆盖层。 还公开了制造薄膜晶体管阵列基板的方法。