公开(公告)号：US20160372498A1

公开(公告)日：2016-12-22

申请号：US14987615

申请日：2016-01-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： KIWAN AHN ,  JUNGHYUN KIM ,  SEUNGHWAN CHO

IPC: H01L27/12 ,  H01L29/66 ,  H01L27/32

CPC classification number: H01L27/1288 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645

Abstract: A method of manufacturing a thin film transistor substrate includes forming a semiconductor pattern on a substrate, wherein the semiconductor pattern includes a first area, a second area, and a third area, wherein the second area and the third area are located on each side of the first area; forming an insulating layer on the substrate to cover the semiconductor pattern; forming a metal pattern layer on the insulating layer using a first photosensitive pattern; doping the semiconductor pattern with first impurities using the first photosensitive pattern; forming a gate electrode by patterning the metal pattern layer using a second photosensitive pattern; and doping the semiconductor pattern with second impurities having a lower concentration than the first impurities.

Abstract translation: 制造薄膜晶体管基板的方法包括在基板上形成半导体图案，其中半导体图案包括第一区域，第二区域和第三区域，其中第二区域和第三区域位于 第一区; 在所述衬底上形成绝缘层以覆盖所述半导体图案; 使用第一感光图案在所述绝缘层上形成金属图案层; 使用第一感光图案，用第一杂质掺杂半导体图案; 通过使用第二感光图案图案化所述金属图案层来形成栅电极; 并且用具有比第一杂质低的浓度的第二杂质来掺杂半导体图案。

公开(公告)号：US20230345791A1

公开(公告)日：2023-10-26

申请号：US18083923

申请日：2022-12-19

Applicant: Samsung Display Co., LTD.

Inventor： WAL JUN KIM ,  HYUNBAE PARK ,  KIWAN AHN ,  YONGJAE JANG

IPC: H10K59/38 ,  H10K50/844 ,  H10K50/86

CPC classification number: H01L27/322 ,  H01L51/5253 ,  H01L51/5284 ,  H01L27/3244

Abstract: A color conversion substrate includes a base substrate including a display area and a non-display area which is adjacent to the display area in a first direction, a color filter layer in the display area, a light blocking member in the non-display area, extending in the first direction and defining a pattern groove of the light blocking member, the pattern groove being in the non-display area, and a refractive layer facing the base substrate with both the color filter layer and the light blocking member therebetween. The refractive layer extends into the pattern groove of the light blocking member and fills the pattern groove.

公开(公告)号：US20210273022A1

公开(公告)日：2021-09-02

申请号：US17157730

申请日：2021-01-25

Applicant: Samsung Display Co., Ltd.

Inventor： HYUNBAE PARK ,  SEUNGHEE LEE ,  WAL JUN KIM ,  KIWAN AHN ,  Joosun YOON

IPC: H01L27/32 ,  H01L51/50 ,  H01L51/52

Abstract: A color-converting substrate includes a color-converting part including a wavelength-converting particle configured to change a wavelength of an incident light to emit a light having a color different from the incident light, a color filter pattern filtering the light emitted from the color-converting part, and a light-reflective layer disposed between the color-converting part and the color filter pattern to selectively reflect a light having a wavelength same as the wavelength of the incident light.

公开(公告)号：US20170012112A1

公开(公告)日：2017-01-12

申请号：US15056033

申请日：2016-02-29

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： JONGYUN KIM ,  WALJUN KIM ,  JUNGHYUN KIM ,  KIWAN AHN

IPC: H01L29/66 ,  H01L21/027 ,  H01L21/3213 ,  H01L21/266

CPC classification number: H01L29/66757 ,  H01L21/0273 ,  H01L21/266 ,  H01L21/32134 ,  H01L27/1288 ,  H01L29/78621 ,  H01L2227/323

Abstract: Provided is a method of manufacturing a thin-film transistor substrate, the method includes forming a semiconductor pattern layer on a substrate. A first insulating film is formed on the semiconductor pattern layer. A metal pattern layer including a gate electrode and first and second alignment electrodes respectively spaced apart from two sides of the gate electrode is formed on the first insulating film. A cover layer covering the gate electrode is formed. The first and second alignment electrodes are removed. A first doping process is performed by doping the semiconductor pattern layer with a first impurity by using the cover layer as a mask. The cover layer is removed. A second doping process is performed by doping the semiconductor pattern layer with a second impurity having a lower impurity concentration than the first impurity by using the gate electrode as a mask.

Abstract translation: 提供一种制造薄膜晶体管基板的方法，该方法包括在基板上形成半导体图案层。 在半导体图案层上形成第一绝缘膜。 在第一绝缘膜上形成包括栅电极的金属图案层和分别与栅电极的两侧间隔开的第一和第二取向电极。 形成覆盖栅电极的覆盖层。 去除第一和第二对准电极。 通过使用覆盖层作为掩模，通过用第一杂质掺杂半导体图案层来执行第一掺杂工艺。 盖层被去除。 通过使用栅电极作为掩模，通过掺杂具有比第一杂质更低的杂质浓度的第二杂质的半导体图案层来进行第二掺杂工艺。