Abstract:
A display panel and display device having the same are disclosed. In one aspect, the display panel includes a first substrate including a display region configured to display images and a non-display region surrounding the display region. The display panel further includes a metal pattern disposed in the non-display region, a second substrate opposing the first substrate, and a sealant disposed between and substantially sealing the first and second substrates, wherein the sealant at least partially overlaps the metal pattern. The metal pattern includes a body portion surrounding the display region and a plurality of protrusions extending from the body portion in a direction from the display region to the non-display region.
Abstract:
An organic light emitting display panel may include a plurality of thin film transistors on a substrate, an insulating interlayer on the thin film transistors, a plurality of first electrodes on a portion of the insulating interlayer electrically connected to the thin film transistors, a plurality of metal lines on a portion of the insulating interlayer, a pixel defining layer on a portion of the insulating interlayer and a portion of the first electrodes, a plurality of organic light emitting structures on the first electrodes in the pixel area, a second electrode on the organic light emitting structures, and a spacer on the pixel defining layer. The insulation interlayer may partially expose electrodes of the thin film transistors. The pixel defining layer may define a pixel area by partially exposing the first electrodes, and an exposed area of the insulating interlayer by partially exposing the insulating interlayer.
Abstract:
An organic light emitting diode display includes: a substrate; a semiconductor layer formed on the substrate and including a switching semiconductor layer, a driving semiconductor layer, and a light emission control semiconductor layer spaced apart from each other; a first gate insulating layer covering the semiconductor layer; a light emission control gate electrode formed on the first gate insulating layer and overlapping the light emission control semiconductor layer; a second gate insulating layer covering the light emission control gate electrode; a switching gate electrode and a driving gate electrode formed on the second gate insulating layer and respectively overlapping the switching semiconductor layer and the driving semiconductor layer; and an interlayer insulating layer covering the switching gate electrode, the driving gate electrode, and the second gate insulating layer. A doping concentration of a channel region of the driving semiconductor layer is higher than a doping concentration of a channel region of the light emission control semiconductor layer.
Abstract:
A high-speed flat panel display has thin film transistors in a pixel array portion in which a plurality of pixels are arranged and a driving circuit portion for driving the pixels of the pixel array portion, which have different resistance values than each other or have different geometric structures than each other. The flat panel display comprises a pixel array portion where a plurality of pixels are arranged, and a driving circuit portion for driving the pixels of the pixel array portion. The thin film transistors in the pixel array portion and the driving circuit portion have different resistance values in their gate regions or drain regions than each other, or have different geometric structures than each other. One thin film transistor has a zigzag shape in its gate region or drain region or has an offset region.
Abstract:
A display apparatus which can be uniformly sealed by an inhomogeneous laser beam is disclosed. One inventive aspect includes a display substrate, an encapsulation substrate and a sealing portion. On the display substrate, a display unit, including a display device, is formed. The encapsulation substrate is formed to face the display substrate. The sealing portion is formed to surround the display unit and bond the display substrate and the encapsulation substrate to each other.
Abstract:
The present invention relates to a flat panel display device comprising a polysilicon thin film transistor and a method of manufacturing the same. Grain sizes of polysilicon grains formed in active channel regions of thin film transistors of a driving circuit portion and a pixel portion of the flat panel display device are different from each other. Further, the flat panel display device comprising P-type and N-type thin film transistors having different particle shapes from each other.