ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME 有权
    有机发光二极管显示器及其制造方法

    公开(公告)号:US20140138644A1

    公开(公告)日:2014-05-22

    申请号:US13961050

    申请日:2013-08-07

    CPC classification number: H01L27/3262 G09G3/3233 G09G2300/0861 H01L27/1222

    Abstract: An organic light emitting diode display includes: a substrate; a semiconductor layer formed on the substrate and including a switching semiconductor layer, a driving semiconductor layer, and a light emission control semiconductor layer spaced apart from each other; a first gate insulating layer covering the semiconductor layer; a light emission control gate electrode formed on the first gate insulating layer and overlapping the light emission control semiconductor layer; a second gate insulating layer covering the light emission control gate electrode; a switching gate electrode and a driving gate electrode formed on the second gate insulating layer and respectively overlapping the switching semiconductor layer and the driving semiconductor layer; and an interlayer insulating layer covering the switching gate electrode, the driving gate electrode, and the second gate insulating layer. A doping concentration of a channel region of the driving semiconductor layer is higher than a doping concentration of a channel region of the light emission control semiconductor layer.

    Abstract translation: 有机发光二极管显示器包括:基板; 半导体层,形成在所述基板上并且包括彼此间隔开的开关半导体层,驱动半导体层和发光控制半导体层; 覆盖半导体层的第一栅极绝缘层; 发光控制栅极电极,形成在所述第一栅极绝缘层上并与所述发光控制半导体层重叠; 覆盖发光控制栅极的第二栅极绝缘层; 开关栅极电极和驱动栅极电极,形成在第二栅极绝缘层上并分别与开关半导体层和驱动半导体层重叠; 以及覆盖所述开关栅电极,所述驱动栅极电极和所述第二栅极绝缘层的层间绝缘层。 驱动半导体层的沟道区域的掺杂浓度高于发光控制半导体层的沟道区域的掺杂浓度。

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