Abstract:
A method for forming a thin film according to an exemplary embodiment of the present invention includes forming the thin film at a power density in the range of approximately 1.5 to approximately 3 W/cm2 and at a pressure of an inert gas that is in the range of approximately 0.2 to approximately 0.3 Pa. This process results in an amorphous metal thin film barrier layer that prevents undesired diffusion from adjacent layers, even when this barrier layer is thinner than many conventional barrier layers.
Abstract translation:根据本发明的示例性实施方案的薄膜的形成方法包括以大约1.5至大约3W / cm 2的功率密度和处于该范围内的惰性气体的压力形成薄膜 大约0.2至大约0.3Pa。这个过程产生一个非晶金属薄膜阻挡层,防止相邻层的不期望的扩散,即使该阻挡层比许多传统的阻挡层薄。
Abstract:
A display panel includes a first substrate, a second substrate, a thin film transistor, a black column spacer and a barrier layer. The first substrate includes a gate line extending in a first direction and a data line extending in a second direction crossing the first direction. The second substrate faces the first substrate. The thin film transistor is disposed on the first substrate, and connected to the gate line and the data line. The black column spacer includes a blocking part covering the gate line and the thin film transistor, and a maintaining part integrated with the blocking part. The maintaining part maintains a cell gap between the first substrate and the second substrate. The maintaining part includes a material substantially the same as that of the blocking part. The barrier layer covers the blocking part.
Abstract:
The present invention relates to a liquid crystal display and a driving method thereof. The liquid crystal display of the present invention includes a pixel electrode including: a first subpixel electrode, a second subpixel electrode, and a third subpixel electrode electrically separated from each other; a first thin film transistor connected to the first subpixel electrode; a second thin film transistor connected to the second subpixel electrode; a third thin film transistor connected to the third subpixel electrode; a fourth thin film transistor connected to the second subpixel electrode and the third subpixel electrode; a first gate line connected to the first to third thin film transistors; a second gate line connected to the fourth thin film transistor; a data line connected to the first and second thin film transistors; and a storage electrode line connected to the third thin film transistor.