公开(公告)号：US20230124284A1

公开(公告)日：2023-04-20

申请号：US17897599

申请日：2022-08-29

Applicant: Samsung Display Co., Ltd.

Inventor： DONG-MIN LEE ,  JANG-HYUN KIM ,  BYUNG SOO SO ,  JAEWOO JEONG ,  DONGGYU JIN

IPC: H01L21/02 ,  H01L27/12 ,  B23K26/06

Abstract: A laser crystallization device includes: a first solid-state laser generator which generates a first solid-state laser having a first energy intensity; a second solid-state laser generator which generates a second solid-state laser having a second energy intensity lower than the first energy intensity; and a third solid-state laser generator which generates a third solid-state laser having a third energy intensity lower than the first energy intensity.

公开(公告)号：US20180144950A1

公开(公告)日：2018-05-24

申请号：US15715495

申请日：2017-09-26

Applicant: Samsung Display Co., Ltd.

Inventor： JAEWOO JEONG ,  HYUNGUE KIM ,  JONGJUN BAEK

IPC: H01L21/3213 ,  H01L27/12

Abstract: A method of manufacturing a backplane for a display device includes forming an insulation layer on a substrate, forming a pad electrode layer on the insulation layer, forming a photoresist pattern on the pad electrode layer in the pad region, etching the pad electrode layer and a portion of the insulation layer by the photoresist pattern as an etch-stop layer so as to simultaneously form a pad electrode and a side protection layer, the side protection layer covering a sidewall of the pad electrode, and stripping the photoresist pattern.

公开(公告)号：US20220190142A1

公开(公告)日：2022-06-16

申请号：US17550230

申请日：2021-12-14

Applicant: Samsung Display Co., Ltd.

Inventor： JAEWOO JEONG ,  Jong Oh SEO

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/265 ,  H01L21/266

Abstract: A method of manufacturing transistor may include forming an active layer on a base substrate, forming a sacrificial layer on the active layer, doping a first dopant ion in the active layer through a first ion implantation process, removing the sacrificial layer, forming a gate insulating layer; and forming a gate electrode on the gate insulating layer.

公开(公告)号：US20200273943A1

公开(公告)日：2020-08-27

申请号：US16871185

申请日：2020-05-11

Applicant: Samsung Display Co., Ltd.

Inventor： JAEWOO JEONG ,  HYUNGUE KIM ,  JONGJUN BAEK

IPC: H01L27/32 ,  H01L27/12 ,  H01L21/3213 ,  H01L21/311 ,  H01L51/00 ,  H01L51/52 ,  H01L21/027

Abstract: A method of manufacturing a backplane for a display device includes forming an insulation layer on a substrate, forming a pad electrode layer on the insulation layer, forming a photoresist pattern on the pad electrode layer in the pad region, etching the pad electrode layer and a portion of the insulation layer by the photoresist pattern as an etch-stop layer so as to simultaneously form a pad electrode and a side protection layer, the side protection layer covering a sidewall of the pad electrode, and stripping the photoresist pattern.