公开(公告)号：US20240096911A1

公开(公告)日：2024-03-21

申请号：US18135559

申请日：2023-04-17

Applicant: Samsung Display Co., Ltd.

Inventor： DONG-MIN LEE ,  DONGGYU JIN

IPC: H01L27/12 ,  H01S5/06 ,  H01S5/40

CPC classification number: H01L27/1274 ,  H01S5/0609 ,  H01S5/4012

Abstract: Provided is a laser crystallization apparatus including a beam generator generating an input laser beam, a beam converter dividing an input laser beam incident from a beam generator into a plurality of sub laser beams and disposed to have a predetermined rotation angle with respect to an optical axis parallel to a traveling direction of an input laser beam, and a beam concentrator condensing a plurality of sub laser beams and outputting an output laser beam having a beam profile having a predetermined beam width. Accordingly, a width of a stiffness area of a beam profile of an input laser beam may increase and a width of a high intensity area may decrease. Accordingly, the number of shots for the stiffness area at specific point of an amorphous silicon film may increase. Accordingly, a gradual dehydrogenation effect on an amorphous silicon film may be implemented. Accordingly, occurrence of defects in a polycrystalline silicon film formed by laser crystallization may be minimized or prevented.

公开(公告)号：US20230124284A1

公开(公告)日：2023-04-20

申请号：US17897599

申请日：2022-08-29

Applicant: Samsung Display Co., Ltd.

Inventor： DONG-MIN LEE ,  JANG-HYUN KIM ,  BYUNG SOO SO ,  JAEWOO JEONG ,  DONGGYU JIN

IPC: H01L21/02 ,  H01L27/12 ,  B23K26/06

Abstract: A laser crystallization device includes: a first solid-state laser generator which generates a first solid-state laser having a first energy intensity; a second solid-state laser generator which generates a second solid-state laser having a second energy intensity lower than the first energy intensity; and a third solid-state laser generator which generates a third solid-state laser having a third energy intensity lower than the first energy intensity.