公开(公告)号：US10475377B2

公开(公告)日：2019-11-12

申请号：US14928417

申请日：2015-10-30

Applicant: Samsung Display Co., Ltd.

Inventor： Hyung-Don Na ,  Young-II Kim ,  Doo-Hyung Woo ,  Young-Jin Chang ,  Ji-Hye Eom ,  In-Do Chung ,  Seong-Hyun Jin

IPC: G09G3/3233 ,  H01L27/32 ,  H01L29/786

Abstract: The present invention provides a display device and a method of driving the same. The display device includes: a light-emitting device; a first capacitor connected between a first contact point and a second contact point; a driving transistor including an input terminal connected to a first voltage, an output terminal, and a control terminal connected to the second contact point; a first switching transistor controlled by a first control signal and connected between a data voltage and the first contact point; a second switching transistor controlled by a second control signal and connected between a second voltage and the first contact point; a third switching transistor controlled by a third control signal and connected between the second contact point and the second voltage; a fourth switching transistor controlled by the first control signal and connected between the second contact point and the output terminal of the driving transistor; and a fifth switching transistor controlled by the second control signal and connected between the light-emitting device and the output terminal of the driving transistor.

公开(公告)号：US20130130514A1

公开(公告)日：2013-05-23

申请号：US13746158

申请日：2013-01-21

Applicant: Samsung Display Co., Ltd.

Inventor： In-Do Chung

IPC: H01L21/324

CPC classification number: H01L21/324 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02691 ,  H01L21/268

Abstract: A crystallization method is disclosed. In one embodiment, the method includes providing a substrate having an amorphous silicon layer, wherein the substate has first and second sides opposing each other and irradiating a laser beam onto the substrate so as to have an inclined angle with respect to the first and second sides of the substrate. The method further includes relatively moving one of the laser beam and the substate with respect to the other i) in a first direction from the first side to the second side of the substate and ii) in a second direction which crosses the first direction.

Abstract translation: 公开了一种结晶方法。 在一个实施例中，该方法包括提供具有非晶硅层的衬底，其中所述子状态具有彼此相对的第一和第二侧面，并将激光束照射到所述衬底上，以便相对于所述第一侧面和所述第二侧面具有倾斜角 的基底。 该方法还包括相对于另一个相对于另一个i）在第一方向上从基座的第一侧到第二侧移动激光束和子状态中的一个，以及ii）在与第一方向交叉的第二方向上。

公开(公告)号：US08697585B2

公开(公告)日：2014-04-15

申请号：US13746158

申请日：2013-01-21

Applicant: Samsung Display Co., Ltd.

Inventor： In-Do Chung

IPC: H01L21/268

CPC classification number: H01L21/324 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02691 ,  H01L21/268

Abstract: A crystallization method is disclosed. In one embodiment, the method includes providing a substrate having an amorphous silicon layer, wherein the substate has first and second sides opposing each other and irradiating a laser beam onto the substrate so as to have an inclined angle with respect to the first and second sides of the substrate. The method further includes relatively moving one of the laser beam and the substate with respect to the other i) in a first direction from the first side to the second side of the substate and ii) in a second direction which crosses the first direction.

Abstract translation: 公开了一种结晶方法。 在一个实施例中，该方法包括提供具有非晶硅层的衬底，其中所述子状态具有彼此相对的第一和第二侧面，并将激光束照射到所述衬底上，以便相对于所述第一侧面和所述第二侧面具有倾斜角 的基底。 该方法还包括相对于另一个相对于另一个i）在第一方向上从基座的第一侧到第二侧移动激光束和子状态中的一个，以及ii）在与第一方向交叉的第二方向上。