CHEMICAL VAPOR DEPOSITION SYSTEM
    1.
    发明申请

    公开(公告)号:US20180340258A1

    公开(公告)日:2018-11-29

    申请号:US15990051

    申请日:2018-05-25

    Abstract: A chemical vapor deposition (CVD) system may include a chamber, a susceptor provided in the chamber to support a substrate, a gas distribution part provided over the susceptor, a first ground strap bar provided on a down-side surface of the chamber and electrically connected to the chamber, a second ground strap bar provided on a bottom surface of the susceptor and electrically connected to the susceptor, and a plurality of ground straps electrically connected to the first and second ground strap bars, each of the plurality of ground straps including two opposite portions that are fastened to the first and second ground strap bars, respectively.

    PLASMA MONITORING APPARATUS AND PLASMA PROCESSING APPARATUS INCLUDING THE SAME

    公开(公告)号:US20230130913A1

    公开(公告)日:2023-04-27

    申请号:US17859623

    申请日:2022-07-07

    Abstract: A plasma monitoring apparatus includes a flow control portion including a first port through which an emission light emitted from a plasma is introduced or discharged, and a second port through which the emission light emitted from the plasma is introduced or discharged and has a shape different from a shape of the first port, a transparent glass window extended to the flow control portion and passing an emission light, and a spectroscopic apparatus optically connected to the transparent glass window through an optical fiber and detecting an intensity of the emission light.

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